(111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion

Jong Hyeok Park, Tsuneharu Suzuki, Masashi Kurosawa, Masanobu Miyao, Taizoh Sadoh

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抜粋

Low-temperature (≤ 350°C) formation of orientation-controlled large-grain Ge on insulating substrates is essential to achieve advanced flexible devices employing plastic substrates. To achieve this, effects of interfacial-oxide layer insertion on gold-induced crystallization (GIC) of amorphous Ge films on insulating substrates have been investigated. Consequently, (111)-oriented large-grain (20-50 μm) Ge crystals are obtained at 350°C by inserting interfacial oxide layers. It is speculated that this phenomena is attributed to suppression of random bulk nucleation of Ge in Au films.

元の言語英語
ホスト出版物のタイトルProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
ページ231-234
ページ数4
出版物ステータス出版済み - 10 31 2012
イベント19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, 日本
継続期間: 7 4 20127 6 2012

その他

その他19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
日本
Kyoto
期間7/4/127/6/12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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  • これを引用

    Park, J. H., Suzuki, T., Kurosawa, M., Miyao, M., & Sadoh, T. (2012). (111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion. : Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 (pp. 231-234). [6294891]