120 × 90 element thermoelectric infrared focal plane array with precisely patterned Au-black absorber

masaki Hirota, Y. Nakajima, M. Saito, M. Uchiyama

研究成果: ジャーナルへの寄稿記事

37 引用 (Scopus)

抄録

This paper presents a 120 × 90 element thermoelectric infrared focal plane array with a precisely patterned Au-black absorber that provides high responsivity and a low cost potential. The device has a responsivity of 3900 V/W. The overall chip size is 14.4 mm × 11.0 mm with a 12.0 mm × 9.0 mm imaging area. Each detector consists of two pairs of p-n polysilicon thermocouples and has external dimensions of 100 μm × 100 μm and internal electrical resistance of 90 kΩ. The precisely patterned Au-black infrared absorbing layer was achieved by both a low-pressure vapor deposition technique and a lift-off technique utilizing a PSG sacrificial layer. These techniques make it possible to obtain a Au-black pattern with the same degree of accuracy as with the CMOS process. The Au-black layer showed high absorptance of more than 90% to the light source with a wavelength of from 8 to 13 μm. This performance is suitable for automotive applications as well as consumer electronics.

元の言語英語
ページ(範囲)146-151
ページ数6
ジャーナルSensors and Actuators, A: Physical
135
発行部数1
DOI
出版物ステータス出版済み - 3 30 2007
外部発表Yes

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Focal plane arrays
focal plane devices
absorbers
Infrared radiation
Vapor deposition
Acoustic impedance
Consumer electronics
Thermocouples
Polysilicon
Light sources
absorptance
thermocouples
electrical resistance
Detectors
Imaging techniques
Wavelength
CMOS
light sources
low pressure
chips

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

これを引用

120 × 90 element thermoelectric infrared focal plane array with precisely patterned Au-black absorber. / Hirota, masaki; Nakajima, Y.; Saito, M.; Uchiyama, M.

:: Sensors and Actuators, A: Physical, 巻 135, 番号 1, 30.03.2007, p. 146-151.

研究成果: ジャーナルへの寄稿記事

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