抄録
This paper presents the first-ever 120 × 90 element thermoelectric infrared focal plane array (FPA) fabricated with CMOS technology. The device has a high responsivity of 3,900 V/W and a low cost potential. The overall chip size is 14.4 mm × 11.0 mm with a 12.0 mm × 9.0 mm imaging area. The device structure was optimized for a vacuum-sealed package. Each detector consists of two pairs of p-n polysilicon thermocouples and an NMOS transistor and has external dimensions of 100 μm × 100 μm and an internal electrical resistance of 90 kΩ. The precisely patterned Au-black infrared absorbing layer was achieved by both a low-pressure vapor deposition technique and a lift-off technique utilizing a PSG sacrificial layer. These techniques make it possible to obtain a Au-black pattern with the same degree of accuracy as with the CMOS process. The Au-black layer showed high absorptivity of more than 90 % to the light source with a wavelength of from 8 to 13 μm. This performance is suitable for consumer electronics as well as automotive applications.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 239-249 |
| ページ数 | 11 |
| ジャーナル | Proceedings of SPIE - The International Society for Optical Engineering |
| 巻 | 4820 |
| 発行部数 | 1 |
| DOI | |
| 出版物ステータス | 出版済み - 12 1 2002 |
| イベント | Infrared Technology and Applications XXVIII - Seattle, WA, 米国 継続期間: 7 7 2002 → 7 11 2002 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
これを引用
120×90 element thermopile array fabricated with CMOS technology. / Hirota, Masaki; Nakajima, Yasushi; Saito, Masanori; Satou, Fuminori; Uchiyama, Makato.
：: Proceedings of SPIE - The International Society for Optical Engineering, 巻 4820, 番号 1, 01.12.2002, p. 239-249.研究成果: ジャーナルへの寄稿 › Conference article
}
TY - JOUR
T1 - 120×90 element thermopile array fabricated with CMOS technology
AU - Hirota, Masaki
AU - Nakajima, Yasushi
AU - Saito, Masanori
AU - Satou, Fuminori
AU - Uchiyama, Makato
PY - 2002/12/1
Y1 - 2002/12/1
N2 - This paper presents the first-ever 120 × 90 element thermoelectric infrared focal plane array (FPA) fabricated with CMOS technology. The device has a high responsivity of 3,900 V/W and a low cost potential. The overall chip size is 14.4 mm × 11.0 mm with a 12.0 mm × 9.0 mm imaging area. The device structure was optimized for a vacuum-sealed package. Each detector consists of two pairs of p-n polysilicon thermocouples and an NMOS transistor and has external dimensions of 100 μm × 100 μm and an internal electrical resistance of 90 kΩ. The precisely patterned Au-black infrared absorbing layer was achieved by both a low-pressure vapor deposition technique and a lift-off technique utilizing a PSG sacrificial layer. These techniques make it possible to obtain a Au-black pattern with the same degree of accuracy as with the CMOS process. The Au-black layer showed high absorptivity of more than 90 % to the light source with a wavelength of from 8 to 13 μm. This performance is suitable for consumer electronics as well as automotive applications.
AB - This paper presents the first-ever 120 × 90 element thermoelectric infrared focal plane array (FPA) fabricated with CMOS technology. The device has a high responsivity of 3,900 V/W and a low cost potential. The overall chip size is 14.4 mm × 11.0 mm with a 12.0 mm × 9.0 mm imaging area. The device structure was optimized for a vacuum-sealed package. Each detector consists of two pairs of p-n polysilicon thermocouples and an NMOS transistor and has external dimensions of 100 μm × 100 μm and an internal electrical resistance of 90 kΩ. The precisely patterned Au-black infrared absorbing layer was achieved by both a low-pressure vapor deposition technique and a lift-off technique utilizing a PSG sacrificial layer. These techniques make it possible to obtain a Au-black pattern with the same degree of accuracy as with the CMOS process. The Au-black layer showed high absorptivity of more than 90 % to the light source with a wavelength of from 8 to 13 μm. This performance is suitable for consumer electronics as well as automotive applications.
UR - http://www.scopus.com/inward/record.url?scp=0038663178&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038663178&partnerID=8YFLogxK
U2 - 10.1117/12.457719
DO - 10.1117/12.457719
M3 - Conference article
AN - SCOPUS:0038663178
VL - 4820
SP - 239
EP - 249
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
IS - 1
ER -