120×90 element thermopile array fabricated with CMOS technology

Masaki Hirota, Yasushi Nakajima, Masanori Saito, Fuminori Satou, Makato Uchiyama

研究成果: ジャーナルへの寄稿Conference article

13 引用 (Scopus)

抄録

This paper presents the first-ever 120 × 90 element thermoelectric infrared focal plane array (FPA) fabricated with CMOS technology. The device has a high responsivity of 3,900 V/W and a low cost potential. The overall chip size is 14.4 mm × 11.0 mm with a 12.0 mm × 9.0 mm imaging area. The device structure was optimized for a vacuum-sealed package. Each detector consists of two pairs of p-n polysilicon thermocouples and an NMOS transistor and has external dimensions of 100 μm × 100 μm and an internal electrical resistance of 90 kΩ. The precisely patterned Au-black infrared absorbing layer was achieved by both a low-pressure vapor deposition technique and a lift-off technique utilizing a PSG sacrificial layer. These techniques make it possible to obtain a Au-black pattern with the same degree of accuracy as with the CMOS process. The Au-black layer showed high absorptivity of more than 90 % to the light source with a wavelength of from 8 to 13 μm. This performance is suitable for consumer electronics as well as automotive applications.

元の言語英語
ページ(範囲)239-249
ページ数11
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
4820
発行部数1
DOI
出版物ステータス出版済み - 12 1 2002
イベントInfrared Technology and Applications XXVIII - Seattle, WA, 米国
継続期間: 7 7 20027 11 2002

Fingerprint

Thermopiles
thermopiles
CMOS
Infrared radiation
Vapor deposition
Acoustic impedance
Focal plane arrays
Consumer electronics
Thermocouples
Polysilicon
Light sources
Transistors
Vacuum
focal plane devices
thermocouples
electrical resistance
Detectors
Imaging techniques
Infrared Focal Plane Array
Wavelength

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

これを引用

120×90 element thermopile array fabricated with CMOS technology. / Hirota, Masaki; Nakajima, Yasushi; Saito, Masanori; Satou, Fuminori; Uchiyama, Makato.

:: Proceedings of SPIE - The International Society for Optical Engineering, 巻 4820, 番号 1, 01.12.2002, p. 239-249.

研究成果: ジャーナルへの寄稿Conference article

Hirota, Masaki ; Nakajima, Yasushi ; Saito, Masanori ; Satou, Fuminori ; Uchiyama, Makato. / 120×90 element thermopile array fabricated with CMOS technology. :: Proceedings of SPIE - The International Society for Optical Engineering. 2002 ; 巻 4820, 番号 1. pp. 239-249.
@article{bd92ccd8295d4b76ac73c752021cf566,
title = "120×90 element thermopile array fabricated with CMOS technology",
abstract = "This paper presents the first-ever 120 × 90 element thermoelectric infrared focal plane array (FPA) fabricated with CMOS technology. The device has a high responsivity of 3,900 V/W and a low cost potential. The overall chip size is 14.4 mm × 11.0 mm with a 12.0 mm × 9.0 mm imaging area. The device structure was optimized for a vacuum-sealed package. Each detector consists of two pairs of p-n polysilicon thermocouples and an NMOS transistor and has external dimensions of 100 μm × 100 μm and an internal electrical resistance of 90 kΩ. The precisely patterned Au-black infrared absorbing layer was achieved by both a low-pressure vapor deposition technique and a lift-off technique utilizing a PSG sacrificial layer. These techniques make it possible to obtain a Au-black pattern with the same degree of accuracy as with the CMOS process. The Au-black layer showed high absorptivity of more than 90 {\%} to the light source with a wavelength of from 8 to 13 μm. This performance is suitable for consumer electronics as well as automotive applications.",
author = "Masaki Hirota and Yasushi Nakajima and Masanori Saito and Fuminori Satou and Makato Uchiyama",
year = "2002",
month = "12",
day = "1",
doi = "10.1117/12.457719",
language = "English",
volume = "4820",
pages = "239--249",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",
number = "1",

}

TY - JOUR

T1 - 120×90 element thermopile array fabricated with CMOS technology

AU - Hirota, Masaki

AU - Nakajima, Yasushi

AU - Saito, Masanori

AU - Satou, Fuminori

AU - Uchiyama, Makato

PY - 2002/12/1

Y1 - 2002/12/1

N2 - This paper presents the first-ever 120 × 90 element thermoelectric infrared focal plane array (FPA) fabricated with CMOS technology. The device has a high responsivity of 3,900 V/W and a low cost potential. The overall chip size is 14.4 mm × 11.0 mm with a 12.0 mm × 9.0 mm imaging area. The device structure was optimized for a vacuum-sealed package. Each detector consists of two pairs of p-n polysilicon thermocouples and an NMOS transistor and has external dimensions of 100 μm × 100 μm and an internal electrical resistance of 90 kΩ. The precisely patterned Au-black infrared absorbing layer was achieved by both a low-pressure vapor deposition technique and a lift-off technique utilizing a PSG sacrificial layer. These techniques make it possible to obtain a Au-black pattern with the same degree of accuracy as with the CMOS process. The Au-black layer showed high absorptivity of more than 90 % to the light source with a wavelength of from 8 to 13 μm. This performance is suitable for consumer electronics as well as automotive applications.

AB - This paper presents the first-ever 120 × 90 element thermoelectric infrared focal plane array (FPA) fabricated with CMOS technology. The device has a high responsivity of 3,900 V/W and a low cost potential. The overall chip size is 14.4 mm × 11.0 mm with a 12.0 mm × 9.0 mm imaging area. The device structure was optimized for a vacuum-sealed package. Each detector consists of two pairs of p-n polysilicon thermocouples and an NMOS transistor and has external dimensions of 100 μm × 100 μm and an internal electrical resistance of 90 kΩ. The precisely patterned Au-black infrared absorbing layer was achieved by both a low-pressure vapor deposition technique and a lift-off technique utilizing a PSG sacrificial layer. These techniques make it possible to obtain a Au-black pattern with the same degree of accuracy as with the CMOS process. The Au-black layer showed high absorptivity of more than 90 % to the light source with a wavelength of from 8 to 13 μm. This performance is suitable for consumer electronics as well as automotive applications.

UR - http://www.scopus.com/inward/record.url?scp=0038663178&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038663178&partnerID=8YFLogxK

U2 - 10.1117/12.457719

DO - 10.1117/12.457719

M3 - Conference article

AN - SCOPUS:0038663178

VL - 4820

SP - 239

EP - 249

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

IS - 1

ER -