120×90 element thermopile array fabricated with CMOS technology

Masaki Hirota, Yasushi Nakajima, Masanori Saito, Fuminori Satou, Makoto Uchiyama

研究成果: Contribution to journalConference article査読

15 被引用数 (Scopus)

抄録

This paper presents the first-ever 120 × 90 element thermoelectric infrared focal plane array (FPA) fabricated with CMOS technology. The device has a high responsivity of 3,900 V/W and a low cost potential. The overall chip size is 14.4 mm × 11.0 mm with a 12.0 mm × 9.0 mm imaging area. The device structure was optimized for a vacuum-sealed package. Each detector consists of two pairs of p-n polysilicon thermocouples and an NMOS transistor and has external dimensions of 100 μm × 100 μm and an internal electrical resistance of 90 kΩ. The precisely patterned Au-black infrared absorbing layer was achieved by both a low-pressure vapor deposition technique and a lift-off technique utilizing a PSG sacrificial layer. These techniques make it possible to obtain a Au-black pattern with the same degree of accuracy as with the CMOS process. The Au-black layer showed high absorptivity of more than 90 % to the light source with a wavelength of from 8 to 13 μm. This performance is suitable for consumer electronics as well as automotive applications.

本文言語英語
ページ(範囲)239-249
ページ数11
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
4820
1
DOI
出版ステータス出版済み - 12 1 2002
外部発表はい
イベントInfrared Technology and Applications XXVIII - Seattle, WA, 米国
継続期間: 7 7 20027 11 2002

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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