1.54 μm photoluminescence from Β-Fe Si2 as-deposited film

Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo, Masaru Itakura

研究成果: Contribution to journalArticle査読

22 被引用数 (Scopus)

抄録

The authors succeeded in preparing high-crystal-quality Β-Fe Si2 as-deposited film emitting a photoluminescence spectrum strong in intensity. The density of the nonradiative center at the interface and in the Β-Fe Si2 film remained low by depositing a Cu-treated Si layer such as amorphous Si. The recrystallization of the Cu-treated Si layer during Β-Fe Si2 deposition contributed to improving the Β-Fe Si2 Si interface and the crystallinity of the Β-Fe Si2 film.

本文言語英語
論文番号071903
ジャーナルApplied Physics Letters
91
7
DOI
出版ステータス出版済み - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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