16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique

Shunji Kimura, Yuhki Imai, Yohtaro Umeda, Takatomo Enoki

研究成果: Contribution to conferencePaper査読

31 被引用数 (Scopus)

抄録

This paper reports an InAlAs/InGaAs HEMT distributed baseband amplifier IC using a new loss compensation technique for the drain artificial line. The amplifier has a gain of 16 dB with a DC-to-47-GHz bandwidth. The Gain BandWidth Product (GBWP) is about 300 GHz, which is the highest among all reported single-stage distributed amplifier ICs. It also has a flat gain from DC and operates as a baseband amplifier without any off-chip components.

本文言語英語
ページ96-99
ページ数4
出版ステータス出版済み - 12 1 1994
外部発表はい
イベントProceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA
継続期間: 10 16 199410 19 1994

会議

会議Proceedingsof the 1994 IEEE GaAs IC Symposium
CityPhiladelphia, PA, USA
Period10/16/9410/19/94

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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