+1dBm IIP3, low noise amplifier for ultra-wide band wireless applications

Ghazal A. Fahmy, H. Kanaya

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 被引用数 (Scopus)

抄録

An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.

本文言語英語
ホスト出版物のタイトルICM 2016 - 28th International Conference on Microelectronics
出版社Institute of Electrical and Electronics Engineers Inc.
ページ337-340
ページ数4
ISBN(電子版)9781509057214
DOI
出版ステータス出版済み - 7 2 2016
イベント28th International Conference on Microelectronics, ICM 2016 - Giza, エジプト
継続期間: 12 17 201612 20 2016

出版物シリーズ

名前Proceedings of the International Conference on Microelectronics, ICM
0

その他

その他28th International Conference on Microelectronics, ICM 2016
Countryエジプト
CityGiza
Period12/17/1612/20/16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

フィンガープリント 「+1dBm IIP3, low noise amplifier for ultra-wide band wireless applications」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル