+1dBm IIP3, low noise amplifier for ultra-wide band wireless applications

Ghazal A. Fahmy, Haruichi Kanaya

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抄録

An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.

元の言語英語
ホスト出版物のタイトルICM 2016 - 28th International Conference on Microelectronics
出版者Institute of Electrical and Electronics Engineers Inc.
ページ337-340
ページ数4
ISBN(電子版)9781509057214
DOI
出版物ステータス出版済み - 2 8 2017
イベント28th International Conference on Microelectronics, ICM 2016 - Giza, エジプト
継続期間: 12 17 201612 20 2016

その他

その他28th International Conference on Microelectronics, ICM 2016
エジプト
Giza
期間12/17/1612/20/16

Fingerprint

Low noise amplifiers
Noise figure
Linearization
Ultra-wideband (UWB)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

これを引用

Fahmy, G. A., & Kanaya, H. (2017). +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications. : ICM 2016 - 28th International Conference on Microelectronics (pp. 337-340). [7847884] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICM.2016.7847884

+1dBm IIP3, low noise amplifier for ultra-wide band wireless applications. / Fahmy, Ghazal A.; Kanaya, Haruichi.

ICM 2016 - 28th International Conference on Microelectronics. Institute of Electrical and Electronics Engineers Inc., 2017. p. 337-340 7847884.

研究成果: 著書/レポートタイプへの貢献会議での発言

Fahmy, GA & Kanaya, H 2017, +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications. : ICM 2016 - 28th International Conference on Microelectronics., 7847884, Institute of Electrical and Electronics Engineers Inc., pp. 337-340, 28th International Conference on Microelectronics, ICM 2016, Giza, エジプト, 12/17/16. https://doi.org/10.1109/ICM.2016.7847884
Fahmy GA, Kanaya H. +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications. : ICM 2016 - 28th International Conference on Microelectronics. Institute of Electrical and Electronics Engineers Inc. 2017. p. 337-340. 7847884 https://doi.org/10.1109/ICM.2016.7847884
Fahmy, Ghazal A. ; Kanaya, Haruichi. / +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications. ICM 2016 - 28th International Conference on Microelectronics. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 337-340
@inproceedings{6411e8e8fd8b4498919215ece5c345fa,
title = "+1dBm IIP3, low noise amplifier for ultra-wide band wireless applications",
abstract = "An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.",
author = "Fahmy, {Ghazal A.} and Haruichi Kanaya",
year = "2017",
month = "2",
day = "8",
doi = "10.1109/ICM.2016.7847884",
language = "English",
pages = "337--340",
booktitle = "ICM 2016 - 28th International Conference on Microelectronics",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications

AU - Fahmy, Ghazal A.

AU - Kanaya, Haruichi

PY - 2017/2/8

Y1 - 2017/2/8

N2 - An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.

AB - An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.

UR - http://www.scopus.com/inward/record.url?scp=85014912031&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85014912031&partnerID=8YFLogxK

U2 - 10.1109/ICM.2016.7847884

DO - 10.1109/ICM.2016.7847884

M3 - Conference contribution

SP - 337

EP - 340

BT - ICM 2016 - 28th International Conference on Microelectronics

PB - Institute of Electrical and Electronics Engineers Inc.

ER -