TY - GEN
T1 - +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications
AU - Fahmy, Ghazal A.
AU - Kanaya, H.
PY - 2016/7/2
Y1 - 2016/7/2
N2 - An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.
AB - An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.
UR - http://www.scopus.com/inward/record.url?scp=85014912031&partnerID=8YFLogxK
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U2 - 10.1109/ICM.2016.7847884
DO - 10.1109/ICM.2016.7847884
M3 - Conference contribution
T3 - Proceedings of the International Conference on Microelectronics, ICM
SP - 337
EP - 340
BT - ICM 2016 - 28th International Conference on Microelectronics
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th International Conference on Microelectronics, ICM 2016
Y2 - 17 December 2016 through 20 December 2016
ER -