+1dBm IIP3, low noise amplifier for ultra-wide band wireless applications

Ghazal A. Fahmy, H. Kanaya

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 引用 (Scopus)

抜粋

An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.

元の言語英語
ホスト出版物のタイトルICM 2016 - 28th International Conference on Microelectronics
出版者Institute of Electrical and Electronics Engineers Inc.
ページ337-340
ページ数4
ISBN(電子版)9781509057214
DOI
出版物ステータス出版済み - 7 2 2016
イベント28th International Conference on Microelectronics, ICM 2016 - Giza, エジプト
継続期間: 12 17 201612 20 2016

出版物シリーズ

名前Proceedings of the International Conference on Microelectronics, ICM
0

その他

その他28th International Conference on Microelectronics, ICM 2016
エジプト
Giza
期間12/17/1612/20/16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • これを引用

    Fahmy, G. A., & Kanaya, H. (2016). +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications. : ICM 2016 - 28th International Conference on Microelectronics (pp. 337-340). [7847884] (Proceedings of the International Conference on Microelectronics, ICM; 巻数 0). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICM.2016.7847884