TY - JOUR
T1 - 22-GHz-Band Oscillator Using Integrated H-Shape Defected Ground Structure Resonator in 0.18-μ m CMOS Technology
AU - Jahan, Nusrat
AU - Ab Rahim, Siti Amalina Enche
AU - Mosalam, Hamed
AU - Barakat, Adel
AU - Kaho, Takana
AU - Pokharel, Ramesh K.
N1 - Funding Information:
Manuscript received November 18, 2017; revised December 26, 2017; accepted January 26, 2018. Date of publication February 21, 2018; date of current version March 9, 2018. This work was supported in part by Grant-in-Aid for Scientific Research (C) under Grant JP16K06301 and in part by the VLSI Design and Education Center, The University of Tokyo in collaboration with Cadence and Keysight Corporations. (Corresponding author: Nusrat Jahan.) N. Jahan, S. A. Enche Ab Rahim, T. Kaho, and R. K. Pokharel are with the Faculty of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan (e-mail: 3IE16609S@s.kyushu-u.ac.jp; amalina.rahim@kyudai.jp; kaho.takana@lab.ntt.co.jp; pokharel@ ed.kyushu-u.ac.jp).
Publisher Copyright:
© 2001-2012 IEEE.
PY - 2018/3
Y1 - 2018/3
N2 - A novel 22-GHz-band oscillator using an integrated defected ground structure (DGS) resonator is presented for quasi-millimeter waveband applications. The DGS is etched on the first metal layer (M1) below a 50-Ω microstrip line on the top metal layer (M6) of 0.18-μm one-poly six-metal (1P6M) complementary metal-oxide-semiconductor (CMOS) technology. The proposed oscillator is fabricated using 0.18-μm CMOS technology, and the measured carrier frequency and phase noise are 22.88 GHz and-129.21 dBc/Hz (-108.05 dBc/Hz) at 10-MHz (1 MHz) offset frequency, respectively. The power dissipation is 6 mW that results in a figure of merit to be-188.8 dB. As the DGS resonator could be designed at any high frequency, it may give an alternative design approach of high performance voltage controlled oscillator and frequency synthesizers at K-band and beyond, thus alleviates the problem of self-resonance that a spiral inductor usually encounters at higher frequency.
AB - A novel 22-GHz-band oscillator using an integrated defected ground structure (DGS) resonator is presented for quasi-millimeter waveband applications. The DGS is etched on the first metal layer (M1) below a 50-Ω microstrip line on the top metal layer (M6) of 0.18-μm one-poly six-metal (1P6M) complementary metal-oxide-semiconductor (CMOS) technology. The proposed oscillator is fabricated using 0.18-μm CMOS technology, and the measured carrier frequency and phase noise are 22.88 GHz and-129.21 dBc/Hz (-108.05 dBc/Hz) at 10-MHz (1 MHz) offset frequency, respectively. The power dissipation is 6 mW that results in a figure of merit to be-188.8 dB. As the DGS resonator could be designed at any high frequency, it may give an alternative design approach of high performance voltage controlled oscillator and frequency synthesizers at K-band and beyond, thus alleviates the problem of self-resonance that a spiral inductor usually encounters at higher frequency.
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U2 - 10.1109/LMWC.2018.2801031
DO - 10.1109/LMWC.2018.2801031
M3 - Article
AN - SCOPUS:85042377173
VL - 28
SP - 233
EP - 235
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
SN - 1531-1309
IS - 3
ER -