22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

Kazutoshi Kato, S. Hata, A. Kozen, S. Oku, S. Matsumoto, J. Yoshida

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

抄録

A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

元の言語英語
ページ(範囲)1140-1142
ページ数3
ジャーナルElectronics Letters
28
発行部数12
DOI
出版物ステータス出版済み - 6 4 1992
外部発表Yes

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Optical waveguides
Photodiodes
Waveguides

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

これを引用

22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure. / Kato, Kazutoshi; Hata, S.; Kozen, A.; Oku, S.; Matsumoto, S.; Yoshida, J.

:: Electronics Letters, 巻 28, 番号 12, 04.06.1992, p. 1140-1142.

研究成果: ジャーナルへの寄稿記事

Kato, Kazutoshi ; Hata, S. ; Kozen, A. ; Oku, S. ; Matsumoto, S. ; Yoshida, J. / 22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure. :: Electronics Letters. 1992 ; 巻 28, 番号 12. pp. 1140-1142.
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AU - Yoshida, J.

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