22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

K. Kato; S. Hata; A. Kozen; S. Oku; S. Matsumoto; J. Yoshida

doi:10.1049/el:19920719

22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

K. Kato, S. Hata, A. Kozen, S. Oku, S. Matsumoto, J. Yoshida

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

9 被引用数 (Scopus)

抄録

A novel butt-joint structure employing SiO₂ sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

本文言語	英語
ページ（範囲）	1140-1142
ページ数	3
ジャーナル	Electronics Letters
巻	28
号	12
DOI	https://doi.org/10.1049/el:19920719
出版ステータス	出版済み - 6月 4 1992
外部発表	はい

All Science Journal Classification (ASJC) codes

電子工学および電気工学

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10.1049/el:19920719

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abstract = "A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.",

author = "K. Kato and S. Hata and A. Kozen and S. Oku and S. Matsumoto and J. Yoshida",

year = "1992",

month = jun,

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doi = "10.1049/el:19920719",

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T1 - 22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

AU - Kato, K.

AU - Hata, S.

AU - Kozen, A.

AU - Oku, S.

AU - Matsumoto, S.

AU - Yoshida, J.

PY - 1992/6/4

Y1 - 1992/6/4

N2 - A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

AB - A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

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JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

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ER -

22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

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