22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

K. Kato, S. Hata, A. Kozen, S. Oku, S. Matsumoto, J. Yoshida

研究成果: Contribution to journalArticle査読

8 被引用数 (Scopus)

抄録

A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

本文言語英語
ページ(範囲)1140-1142
ページ数3
ジャーナルElectronics Letters
28
12
DOI
出版ステータス出版済み - 6 4 1992
外部発表はい

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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