抄録
A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 1140-1142 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 28 |
| 発行部数 | 12 |
| DOI | |
| 出版物ステータス | 出版済み - 6 4 1992 |
| 外部発表 | Yes |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
これを引用
22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure. / Kato, Kazutoshi; Hata, S.; Kozen, A.; Oku, S.; Matsumoto, S.; Yoshida, J.
：: Electronics Letters, 巻 28, 番号 12, 04.06.1992, p. 1140-1142.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - 22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure
AU - Kato, Kazutoshi
AU - Hata, S.
AU - Kozen, A.
AU - Oku, S.
AU - Matsumoto, S.
AU - Yoshida, J.
PY - 1992/6/4
Y1 - 1992/6/4
N2 - A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.
AB - A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.
UR - http://www.scopus.com/inward/record.url?scp=0027111509&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027111509&partnerID=8YFLogxK
U2 - 10.1049/el:19920719
DO - 10.1049/el:19920719
M3 - Article
VL - 28
SP - 1140
EP - 1142
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 12
ER -