抄録
A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.
本文言語 | 英語 |
---|---|
ページ(範囲) | 1140-1142 |
ページ数 | 3 |
ジャーナル | Electronics Letters |
巻 | 28 |
号 | 12 |
DOI | |
出版ステータス | 出版済み - 6月 4 1992 |
外部発表 | はい |
All Science Journal Classification (ASJC) codes
- 電子工学および電気工学