TY - JOUR
T1 - 2D WS2
T2 - From Vapor Phase Synthesis to Device Applications
AU - Lan, Changyong
AU - Li, Chun
AU - Ho, Johnny C.
AU - Liu, Yong
N1 - Funding Information:
This work was supported by the National Key Research and Development Program of China (no. 2019YFB2203504), Innovation Research Groups of the National Natural Science Foundation of China (grant no. 61421002), the National Natural Science Foundation of China (grant nos. 61475030, 61605024, 61775031, and 61975024), Fundamental Research Funds for the Central Universities (ZYGX2018J056), UESTC Foundation for the Academic Newcomers Award, the Open Fund of Wuhan National Laboratory for Optoelectronics (2018WNLOKF013), the General Research Fund (CityU 11204618), and the Theme‐based Research (T42‐103/16‐N) of the Research Grants Council of Hong Kong SAR, China.
Publisher Copyright:
© 2020 Wiley-VCH GmbH.
PY - 2021/7
Y1 - 2021/7
N2 - The discovery of graphene has triggered the research on 2D layer structured materials. Among many 2D materials, semiconducting transition metal dichalcogenides (TMDs) are widely considered to be the most promising ones due to their excellent electrical and optoelectronic characteristics. Tungsten disulfide (WS2) is a kind of such TMDs with fascinating properties, such as the high carrier mobility, appropriate band gap, strong light–matter interaction with the large light absorption coefficient, very large exciton binding energy, large spin splitting, and polarized light emission. All these interesting properties can make the 2D WS2 being highly favorable for applications in memristors, light-emitting devices, optical modulators, and many others. Here, the comprehensive review on the properties, vapor phase synthesis, electronic and optoelectronic applications of 2D WS2 is presented. This review does not only serve as a design guideline to elevate the material quality of 2D WS2 films via enhanced synthesis approaches, but also provides valuable insights to various strategies to improve their device performances. With the fast development of wafer-scale synthesis methods and novel device structures, 2D WS2 can undoubtedly be a rising star for the next-generation devices in the near future.
AB - The discovery of graphene has triggered the research on 2D layer structured materials. Among many 2D materials, semiconducting transition metal dichalcogenides (TMDs) are widely considered to be the most promising ones due to their excellent electrical and optoelectronic characteristics. Tungsten disulfide (WS2) is a kind of such TMDs with fascinating properties, such as the high carrier mobility, appropriate band gap, strong light–matter interaction with the large light absorption coefficient, very large exciton binding energy, large spin splitting, and polarized light emission. All these interesting properties can make the 2D WS2 being highly favorable for applications in memristors, light-emitting devices, optical modulators, and many others. Here, the comprehensive review on the properties, vapor phase synthesis, electronic and optoelectronic applications of 2D WS2 is presented. This review does not only serve as a design guideline to elevate the material quality of 2D WS2 films via enhanced synthesis approaches, but also provides valuable insights to various strategies to improve their device performances. With the fast development of wafer-scale synthesis methods and novel device structures, 2D WS2 can undoubtedly be a rising star for the next-generation devices in the near future.
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U2 - 10.1002/aelm.202000688
DO - 10.1002/aelm.202000688
M3 - Review article
AN - SCOPUS:85090789824
VL - 7
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 7
M1 - 2000688
ER -