3-dimensional imaging of dislocation microstructures by electron beams

J. S. Barnard, J. H. Sharp, S. Hata, M. Mitsuhara, K. Kaneko, K. Higashida

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We review the progress in the electron tomography of dislocation microstructures in the transmission electron microscope (TEM). Dislocation contrast is visible both in conventional TEM and scanning TEM (STEM) modes and, despite the complicated intensity variations, dislocation contrast can be isolated using computational filtering techniques prior to reconstruction. We find that STEM annular dark-field (STEM-ADF) imaging offers significant advantages in terms of dislocation contrast and background artifacts. We present several examples, both in semiconducting and metallic systems, illustrating the properties of 3D dislocations. We present the high-angle triple-axis (HATA) specimen holder where the diffraction condition can be chosen at will and dislocation tomograms of multiple reflections can be combined. 3D dislocations are analyzed in terms of dislocation density and dislocation nodal structures. Several avenues of study are suggested that may exploit the 3D dislocation data.

本文言語英語
ホスト出版物のタイトルThree-Dimensional Tomography of Materials
ページ30-40
ページ数11
DOI
出版ステータス出版済み - 2012
イベント2011 MRS Fall Meeting - Boston, MA, 米国
継続期間: 11 28 201112 2 2011

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1421
ISSN(印刷版)0272-9172

その他

その他2011 MRS Fall Meeting
Country米国
CityBoston, MA
Period11/28/1112/2/11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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