TY - GEN
T1 - 3-dimensional imaging of dislocation microstructures by electron beams
AU - Barnard, J. S.
AU - Sharp, J. H.
AU - Hata, S.
AU - Mitsuhara, M.
AU - Kaneko, K.
AU - Higashida, K.
N1 - Funding Information:
JSB and JHS are grateful to Prof. Colin Humphreys for the GaN specimens. The EPSRC is acknowledged for the Doctoral Training Account (JHS). Kyushu University, the Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (JSPS) and the Ministry of Education, Culture, Sports, Science and Technology (MEXT) Japan are thanked for their support of the work by SH, MM, HM, SM, KK and KH.
Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - We review the progress in the electron tomography of dislocation microstructures in the transmission electron microscope (TEM). Dislocation contrast is visible both in conventional TEM and scanning TEM (STEM) modes and, despite the complicated intensity variations, dislocation contrast can be isolated using computational filtering techniques prior to reconstruction. We find that STEM annular dark-field (STEM-ADF) imaging offers significant advantages in terms of dislocation contrast and background artifacts. We present several examples, both in semiconducting and metallic systems, illustrating the properties of 3D dislocations. We present the high-angle triple-axis (HATA) specimen holder where the diffraction condition can be chosen at will and dislocation tomograms of multiple reflections can be combined. 3D dislocations are analyzed in terms of dislocation density and dislocation nodal structures. Several avenues of study are suggested that may exploit the 3D dislocation data.
AB - We review the progress in the electron tomography of dislocation microstructures in the transmission electron microscope (TEM). Dislocation contrast is visible both in conventional TEM and scanning TEM (STEM) modes and, despite the complicated intensity variations, dislocation contrast can be isolated using computational filtering techniques prior to reconstruction. We find that STEM annular dark-field (STEM-ADF) imaging offers significant advantages in terms of dislocation contrast and background artifacts. We present several examples, both in semiconducting and metallic systems, illustrating the properties of 3D dislocations. We present the high-angle triple-axis (HATA) specimen holder where the diffraction condition can be chosen at will and dislocation tomograms of multiple reflections can be combined. 3D dislocations are analyzed in terms of dislocation density and dislocation nodal structures. Several avenues of study are suggested that may exploit the 3D dislocation data.
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U2 - 10.1557/opl.2012.430
DO - 10.1557/opl.2012.430
M3 - Conference contribution
AN - SCOPUS:84879408972
SN - 9781627482325
T3 - Materials Research Society Symposium Proceedings
SP - 30
EP - 40
BT - Three-Dimensional Tomography of Materials
T2 - 2011 MRS Fall Meeting
Y2 - 28 November 2011 through 2 December 2011
ER -