325 nm-laser-excited micro-photoluminescence for strained Si films

Dong Wang, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿学術誌査読

抄録

Low-temperature micro-photoluminescence (PL) was performed for strained Si (sSi) films by 325 nm-laser excitation at 8.5 K. All of the sSi films were thicker than the penetration depth (dp) of the 325-nm line for Si. The dependence of the PL spectra on the strain condition was studied by comparing dp to the thickness of the strained part (ts), which varied in the sSi film plane. Under the condition ts > dp, the strained-part-related PL (PL-S) was observed, but not the unstrained-part-related PL (PL-US). Under the condition ts < dp, PL-US appeared and its intensity negatively depended on ts, while the intensity of PL-S positively depended on ts. Under the condition of a very small ts, PL-S was never observed. These phenomena were explained by exciton behaviors in sSi film with a band-gap distribution, and enable a deeper understanding of PL characteristics in a relatively large-scale sample with a depth distribution of strain.

本文言語英語
ページ(範囲)2470-2473
ページ数4
ジャーナルThin Solid Films
518
9
DOI
出版ステータス出版済み - 2月 26 2010

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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