325 nm-laser-excited micro-photoluminescence for strained Si films

Dong Wang, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿記事

抄録

Low-temperature micro-photoluminescence (PL) was performed for strained Si (sSi) films by 325 nm-laser excitation at 8.5 K. All of the sSi films were thicker than the penetration depth (dp) of the 325-nm line for Si. The dependence of the PL spectra on the strain condition was studied by comparing dp to the thickness of the strained part (ts), which varied in the sSi film plane. Under the condition ts > dp, the strained-part-related PL (PL-S) was observed, but not the unstrained-part-related PL (PL-US). Under the condition ts < dp, PL-US appeared and its intensity negatively depended on ts, while the intensity of PL-S positively depended on ts. Under the condition of a very small ts, PL-S was never observed. These phenomena were explained by exciton behaviors in sSi film with a band-gap distribution, and enable a deeper understanding of PL characteristics in a relatively large-scale sample with a depth distribution of strain.

元の言語英語
ページ(範囲)2470-2473
ページ数4
ジャーナルThin Solid Films
518
発行部数9
DOI
出版物ステータス出版済み - 2 26 2010

Fingerprint

Photoluminescence
photoluminescence
Lasers
lasers
Laser excitation
Thick films
Excitons
thick films
Energy gap
penetration
excitons
excitation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

325 nm-laser-excited micro-photoluminescence for strained Si films. / Wang, Dong; Yang, Haigui; Kitamura, Tokuhide; Nakashima, Hiroshi.

:: Thin Solid Films, 巻 518, 番号 9, 26.02.2010, p. 2470-2473.

研究成果: ジャーナルへの寄稿記事

Wang, Dong ; Yang, Haigui ; Kitamura, Tokuhide ; Nakashima, Hiroshi. / 325 nm-laser-excited micro-photoluminescence for strained Si films. :: Thin Solid Films. 2010 ; 巻 518, 番号 9. pp. 2470-2473.
@article{68a0ff87a5fe4399b4ca1f3a9ace311c,
title = "325 nm-laser-excited micro-photoluminescence for strained Si films",
abstract = "Low-temperature micro-photoluminescence (PL) was performed for strained Si (sSi) films by 325 nm-laser excitation at 8.5 K. All of the sSi films were thicker than the penetration depth (dp) of the 325-nm line for Si. The dependence of the PL spectra on the strain condition was studied by comparing dp to the thickness of the strained part (ts), which varied in the sSi film plane. Under the condition ts > dp, the strained-part-related PL (PL-S) was observed, but not the unstrained-part-related PL (PL-US). Under the condition ts < dp, PL-US appeared and its intensity negatively depended on ts, while the intensity of PL-S positively depended on ts. Under the condition of a very small ts, PL-S was never observed. These phenomena were explained by exciton behaviors in sSi film with a band-gap distribution, and enable a deeper understanding of PL characteristics in a relatively large-scale sample with a depth distribution of strain.",
author = "Dong Wang and Haigui Yang and Tokuhide Kitamura and Hiroshi Nakashima",
year = "2010",
month = "2",
day = "26",
doi = "10.1016/j.tsf.2009.09.124",
language = "English",
volume = "518",
pages = "2470--2473",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "9",

}

TY - JOUR

T1 - 325 nm-laser-excited micro-photoluminescence for strained Si films

AU - Wang, Dong

AU - Yang, Haigui

AU - Kitamura, Tokuhide

AU - Nakashima, Hiroshi

PY - 2010/2/26

Y1 - 2010/2/26

N2 - Low-temperature micro-photoluminescence (PL) was performed for strained Si (sSi) films by 325 nm-laser excitation at 8.5 K. All of the sSi films were thicker than the penetration depth (dp) of the 325-nm line for Si. The dependence of the PL spectra on the strain condition was studied by comparing dp to the thickness of the strained part (ts), which varied in the sSi film plane. Under the condition ts > dp, the strained-part-related PL (PL-S) was observed, but not the unstrained-part-related PL (PL-US). Under the condition ts < dp, PL-US appeared and its intensity negatively depended on ts, while the intensity of PL-S positively depended on ts. Under the condition of a very small ts, PL-S was never observed. These phenomena were explained by exciton behaviors in sSi film with a band-gap distribution, and enable a deeper understanding of PL characteristics in a relatively large-scale sample with a depth distribution of strain.

AB - Low-temperature micro-photoluminescence (PL) was performed for strained Si (sSi) films by 325 nm-laser excitation at 8.5 K. All of the sSi films were thicker than the penetration depth (dp) of the 325-nm line for Si. The dependence of the PL spectra on the strain condition was studied by comparing dp to the thickness of the strained part (ts), which varied in the sSi film plane. Under the condition ts > dp, the strained-part-related PL (PL-S) was observed, but not the unstrained-part-related PL (PL-US). Under the condition ts < dp, PL-US appeared and its intensity negatively depended on ts, while the intensity of PL-S positively depended on ts. Under the condition of a very small ts, PL-S was never observed. These phenomena were explained by exciton behaviors in sSi film with a band-gap distribution, and enable a deeper understanding of PL characteristics in a relatively large-scale sample with a depth distribution of strain.

UR - http://www.scopus.com/inward/record.url?scp=76049123491&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76049123491&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.09.124

DO - 10.1016/j.tsf.2009.09.124

M3 - Article

AN - SCOPUS:76049123491

VL - 518

SP - 2470

EP - 2473

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 9

ER -