3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, W. Saito, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Full integration of a back-gate-controlled IGBT (BC-IGBT), which comprises top and bottom independently controlled MOS gates, is experimentally demonstrated. By using the back side MOS gate for accelerating electron drain and blocking of hole injection, more than 60% reduction of turn-off loss was achieved. Instead of the conventional wafer bonding approach, a cost effective process flow using double side lithography has been developed and used. Thanks to the process flexibility, back side design was carefully optimized to achieve stable operation and manufacturability, in addition to low switching loss. BC-IGBT will provide a new technological option for expanding the applicable switching frequency / voltage range of Si power devices.

本文言語英語
ホスト出版物のタイトル2020 IEEE International Electron Devices Meeting, IEDM 2020
出版社Institute of Electrical and Electronics Engineers Inc.
ページ5.3.1-5.3.4
ISBN(電子版)9781728188881
DOI
出版ステータス出版済み - 12 12 2020
イベント66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, 米国
継続期間: 12 12 202012 18 2020

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
2020-December
ISSN(印刷版)0163-1918

会議

会議66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country米国
CityVirtual, San Francisco
Period12/12/2012/18/20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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