3300V Scaled IGBTs Driven by 5V Gate Voltage

Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi OguraShin Ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 被引用数 (Scopus)

抄録

In this work, 5V gate drive 3300V IGBTs, designed based on a scaling principle, have been demonstrated. Turn-off characteristics without noticeable degradation in the gate voltage waveforms were confirmed. Turn-off tail current of the scaled devices significantly decreased than conventional 15V-driven devices. As a result of both Vce and turn-off loss reduction, 35% improvement in Eoff vs Vcesat relationship was achieved.

本文言語英語
ホスト出版物のタイトル2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ43-46
ページ数4
ISBN(電子版)9781728105796
DOI
出版ステータス出版済み - 5 2019
イベント31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 - Shanghai, 中国
継続期間: 5 19 20195 23 2019

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2019-May
ISSN(印刷版)1063-6854

会議

会議31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
Country中国
CityShanghai
Period5/19/195/23/19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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