380V/1.9A GaN power-HEMT: Current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Tomokazu Domon, Ichiro Omura, Masakazu Yamaguchi

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

12 被引用数 (Scopus)

抄録

The current collapse phenomena in 380V/1.9A GaN power-HEMTs designed for high-voltage power electronics application is reported. The influence of these phenomena to the power-electronics circuit performance under high applied voltage is discussed using a 27.1 MHz class-E amplifier, which can be one of an industrial application candidate. It has been found that the optimized field plate structure minimizes the increase of conduction loss caused by the current collapse phenomena and thus improves the power efficiency of the circuit. The minimized device achieved the output power of 13.8 W and the power efficiency of 89.6 % for the demonstrated circuit even with the applied drain voltage of 330 V and the switching frequency of 27.1 MHz. These results show the future possibility of a new GaN-device application with both high voltage and high frequency condition.

本文言語英語
ホスト出版物のタイトルIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
ページ586-589
ページ数4
出版ステータス出版済み - 12 1 2005
外部発表はい
イベントIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, 米国
継続期間: 12 5 200512 7 2005

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
2005
ISSN(印刷版)0163-1918

その他

その他IEEE International Electron Devices Meeting, 2005 IEDM
国/地域米国
CityWashington, DC, MD
Period12/5/0512/7/05

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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