3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates

Lijun Liu, Koichi Kakimoto

研究成果: Contribution to journalConference article査読

15 被引用数 (Scopus)

抄録

A series of computations were performed for Czochralski silicon crystal growth in a transverse magnetic field with different crystal growth rates by using a recently developed three-dimensional global model. The effects of the transverse magnetic field and crystal growth rate on the melt-crystal interface were numerically investigated. It was found that the interface shape is three-dimensional when the crystal is not rotating, while it becomes nearly two-dimensional when the crystal is rotating, even at a low rotation rate. The temperature gradient in the axial direction at the melt-crystal interface increases with increase in crystal growth rate except near the crystal edge, where it changes oppositely.

本文言語英語
ページ(範囲)e1521-e1526
ジャーナルJournal of Crystal Growth
275
1-2
DOI
出版ステータス出版済み - 2 15 2005

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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