3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates

Lijun Liu, Koichi Kakimoto

研究成果: ジャーナルへの寄稿Conference article

14 引用 (Scopus)

抄録

A series of computations were performed for Czochralski silicon crystal growth in a transverse magnetic field with different crystal growth rates by using a recently developed three-dimensional global model. The effects of the transverse magnetic field and crystal growth rate on the melt-crystal interface were numerically investigated. It was found that the interface shape is three-dimensional when the crystal is not rotating, while it becomes nearly two-dimensional when the crystal is rotating, even at a low rotation rate. The temperature gradient in the axial direction at the melt-crystal interface increases with increase in crystal growth rate except near the crystal edge, where it changes oppositely.

元の言語英語
ジャーナルJournal of Crystal Growth
275
発行部数1-2
DOI
出版物ステータス出版済み - 2 15 2005

Fingerprint

Crystallization
Crystal growth
crystal growth
Magnetic fields
Crystals
magnetic fields
crystals
Silicon
Thermal gradients
temperature gradients
silicon

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates. / Liu, Lijun; Kakimoto, Koichi.

:: Journal of Crystal Growth, 巻 275, 番号 1-2, 15.02.2005.

研究成果: ジャーナルへの寄稿Conference article

@article{621c2434ec77420cacf8f59eca5552cf,
title = "3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates",
abstract = "A series of computations were performed for Czochralski silicon crystal growth in a transverse magnetic field with different crystal growth rates by using a recently developed three-dimensional global model. The effects of the transverse magnetic field and crystal growth rate on the melt-crystal interface were numerically investigated. It was found that the interface shape is three-dimensional when the crystal is not rotating, while it becomes nearly two-dimensional when the crystal is rotating, even at a low rotation rate. The temperature gradient in the axial direction at the melt-crystal interface increases with increase in crystal growth rate except near the crystal edge, where it changes oppositely.",
author = "Lijun Liu and Koichi Kakimoto",
year = "2005",
month = "2",
day = "15",
doi = "10.1016/j.jcrysgro.2004.11.185",
language = "English",
volume = "275",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - 3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates

AU - Liu, Lijun

AU - Kakimoto, Koichi

PY - 2005/2/15

Y1 - 2005/2/15

N2 - A series of computations were performed for Czochralski silicon crystal growth in a transverse magnetic field with different crystal growth rates by using a recently developed three-dimensional global model. The effects of the transverse magnetic field and crystal growth rate on the melt-crystal interface were numerically investigated. It was found that the interface shape is three-dimensional when the crystal is not rotating, while it becomes nearly two-dimensional when the crystal is rotating, even at a low rotation rate. The temperature gradient in the axial direction at the melt-crystal interface increases with increase in crystal growth rate except near the crystal edge, where it changes oppositely.

AB - A series of computations were performed for Czochralski silicon crystal growth in a transverse magnetic field with different crystal growth rates by using a recently developed three-dimensional global model. The effects of the transverse magnetic field and crystal growth rate on the melt-crystal interface were numerically investigated. It was found that the interface shape is three-dimensional when the crystal is not rotating, while it becomes nearly two-dimensional when the crystal is rotating, even at a low rotation rate. The temperature gradient in the axial direction at the melt-crystal interface increases with increase in crystal growth rate except near the crystal edge, where it changes oppositely.

UR - http://www.scopus.com/inward/record.url?scp=15944415400&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15944415400&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.11.185

DO - 10.1016/j.jcrysgro.2004.11.185

M3 - Conference article

AN - SCOPUS:15944415400

VL - 275

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -