In this paper, a three-dimensional global heat transfer model to describe the floating zone of silicon single-crystal growth is proposed. The steady-state calculations considering argon gas flow, feed rod, silicon melt and crystal are carried out using open source software OpenFOAM with no assumptions of symmetry. From the global calculation, a three dimensional solid-liquid interface has been obtained. Furthermore, the cooling effect of gas flow in three dimensions is considered, and the three-dimensional current-density distribution of the inductor is calculated. By considering the asymmetrical electromagnetic field induced by the inductor, the calculations reveal a deflection of the asymmetrical solid-liquid interface.
All Science Journal Classification (ASJC) codes
- 化学 (全般)