3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells

X. J. Chen, S. Nakano, K. Kakimoto

研究成果: ジャーナルへの寄稿学術誌査読

16 被引用数 (Scopus)

抄録

We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the mc interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the mc interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process.

本文言語英語
ページ(範囲)259-264
ページ数6
ジャーナルJournal of Crystal Growth
318
1
DOI
出版ステータス出版済み - 3月 1 2011
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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