3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth

Xue Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

研究成果: Contribution to journalArticle

1 被引用数 (Scopus)

抄録

In this paper, we propose a three-dimensional model for a 200 mm floating zone silicon crystal growth process to investigate the fluid flow and solid–liquid interface. To study the effect of high-frequency (HF) electromagnetic (EM) heating on the melt flow and interface shape, HF-EM and heat transfer calculations were conducted in three dimensions. Through comparison of EM and Marangoni forces, EM force was found to have a larger effect than Marangoni force on the free surface flow. By considering 3D Marangoni and EM forces at the free surface, a more accurate melt flow distribution has been obtained. Moreover, the results showed that local growth rate became more inhomogeneous when the rotation speed of the crystal was increased. However, a more homogeneous three-phase line could be obtained with a high rotational crystal speed.

本文言語英語
論文番号125403
ジャーナルJournal of Crystal Growth
532
DOI
出版ステータス出版済み - 2 15 2020
外部発表はい

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

フィンガープリント 「3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル