40-Gb/s-class InP HEMT ICs for very-high-speed optical communications

Yuhki Imai, Makoto Nakamura, Shunji Kimura, Yohtaro Umeda, Takatomo Enoki

研究成果: ジャーナルへの寄稿Conference article

7 引用 (Scopus)

抄録

40-Gb/s-class analog indium phosphide high electron mobility transistor integrated circuits used to build high-speed optical receivers are described. Four kinds of ICs are covered: a preamplifier, a baseband amplifier, a limiting amplifier, and a Gilbert cell.

元の言語英語
ページ(範囲)89-92
ページ数4
ジャーナルConference Proceedings - International Conference on Indium Phosphide and Related Materials
出版物ステータス出版済み - 1 1 1995
外部発表Yes
イベントProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
継続期間: 5 9 19955 13 1995

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High electron mobility transistors
Optical communication
Indium phosphide
Optical receivers
Integrated circuits

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

40-Gb/s-class InP HEMT ICs for very-high-speed optical communications. / Imai, Yuhki; Nakamura, Makoto; Kimura, Shunji; Umeda, Yohtaro; Enoki, Takatomo.

:: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 01.01.1995, p. 89-92.

研究成果: ジャーナルへの寄稿Conference article

@article{c127a67f7d3f45a8af751b198c19d00f,
title = "40-Gb/s-class InP HEMT ICs for very-high-speed optical communications",
abstract = "40-Gb/s-class analog indium phosphide high electron mobility transistor integrated circuits used to build high-speed optical receivers are described. Four kinds of ICs are covered: a preamplifier, a baseband amplifier, a limiting amplifier, and a Gilbert cell.",
author = "Yuhki Imai and Makoto Nakamura and Shunji Kimura and Yohtaro Umeda and Takatomo Enoki",
year = "1995",
month = "1",
day = "1",
language = "English",
pages = "89--92",
journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
issn = "1092-8669",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - 40-Gb/s-class InP HEMT ICs for very-high-speed optical communications

AU - Imai, Yuhki

AU - Nakamura, Makoto

AU - Kimura, Shunji

AU - Umeda, Yohtaro

AU - Enoki, Takatomo

PY - 1995/1/1

Y1 - 1995/1/1

N2 - 40-Gb/s-class analog indium phosphide high electron mobility transistor integrated circuits used to build high-speed optical receivers are described. Four kinds of ICs are covered: a preamplifier, a baseband amplifier, a limiting amplifier, and a Gilbert cell.

AB - 40-Gb/s-class analog indium phosphide high electron mobility transistor integrated circuits used to build high-speed optical receivers are described. Four kinds of ICs are covered: a preamplifier, a baseband amplifier, a limiting amplifier, and a Gilbert cell.

UR - http://www.scopus.com/inward/record.url?scp=0029225967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029225967&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029225967

SP - 89

EP - 92

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

ER -