48×32 element thermoelectric infrared focal plane array with precisely patterned Au-black absorber

masaki Hirota, F. Satou, M. Saito, S. Morita

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

抄録

This paper presents a 48×32 element thermoelectric infrared focal plane array that provides high responsivity and potential for low cost The device has a responsivity of 2100 V/W and a time constant of 25 ms. The overall chip size is 10.5 mm×7.4 mm with a 9.12 mm×6.08 mm imaging area. Each detector consists of six pairs of p-n polysilicon thermocouples, and has external dimensions of 190 μm×190 μm. The processes for obtaining a precisely patterned Au-black infrared absorbing layer and reducing the thermal stress of the Si3N4 layer deposited by LP-CVD achieve both high responsivity and an excellent time constant. This performance is suitable for automotive applications.

元の言語英語
ページ(範囲)289-300
ページ数12
ジャーナルSensors and Materials
12
発行部数5
出版物ステータス出版済み - 2000
外部発表Yes

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Focal plane arrays
focal plane devices
time constant
absorbers
Infrared radiation
thermocouples
thermal stresses
Thermocouples
Polysilicon
Thermal stress
Chemical vapor deposition
chips
vapor deposition
Detectors
Imaging techniques
detectors
Costs
silicon nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Instrumentation

これを引用

48×32 element thermoelectric infrared focal plane array with precisely patterned Au-black absorber. / Hirota, masaki; Satou, F.; Saito, M.; Morita, S.

:: Sensors and Materials, 巻 12, 番号 5, 2000, p. 289-300.

研究成果: ジャーナルへの寄稿記事

@article{2abe38ce3e25419e9da370d39c0759eb,
title = "48×32 element thermoelectric infrared focal plane array with precisely patterned Au-black absorber",
abstract = "This paper presents a 48×32 element thermoelectric infrared focal plane array that provides high responsivity and potential for low cost The device has a responsivity of 2100 V/W and a time constant of 25 ms. The overall chip size is 10.5 mm×7.4 mm with a 9.12 mm×6.08 mm imaging area. Each detector consists of six pairs of p-n polysilicon thermocouples, and has external dimensions of 190 μm×190 μm. The processes for obtaining a precisely patterned Au-black infrared absorbing layer and reducing the thermal stress of the Si3N4 layer deposited by LP-CVD achieve both high responsivity and an excellent time constant. This performance is suitable for automotive applications.",
author = "masaki Hirota and F. Satou and M. Saito and S. Morita",
year = "2000",
language = "English",
volume = "12",
pages = "289--300",
journal = "Sensors and Materials",
issn = "0914-4935",
publisher = "M Y U Scientific Publishing Division",
number = "5",

}

TY - JOUR

T1 - 48×32 element thermoelectric infrared focal plane array with precisely patterned Au-black absorber

AU - Hirota, masaki

AU - Satou, F.

AU - Saito, M.

AU - Morita, S.

PY - 2000

Y1 - 2000

N2 - This paper presents a 48×32 element thermoelectric infrared focal plane array that provides high responsivity and potential for low cost The device has a responsivity of 2100 V/W and a time constant of 25 ms. The overall chip size is 10.5 mm×7.4 mm with a 9.12 mm×6.08 mm imaging area. Each detector consists of six pairs of p-n polysilicon thermocouples, and has external dimensions of 190 μm×190 μm. The processes for obtaining a precisely patterned Au-black infrared absorbing layer and reducing the thermal stress of the Si3N4 layer deposited by LP-CVD achieve both high responsivity and an excellent time constant. This performance is suitable for automotive applications.

AB - This paper presents a 48×32 element thermoelectric infrared focal plane array that provides high responsivity and potential for low cost The device has a responsivity of 2100 V/W and a time constant of 25 ms. The overall chip size is 10.5 mm×7.4 mm with a 9.12 mm×6.08 mm imaging area. Each detector consists of six pairs of p-n polysilicon thermocouples, and has external dimensions of 190 μm×190 μm. The processes for obtaining a precisely patterned Au-black infrared absorbing layer and reducing the thermal stress of the Si3N4 layer deposited by LP-CVD achieve both high responsivity and an excellent time constant. This performance is suitable for automotive applications.

UR - http://www.scopus.com/inward/record.url?scp=0034360654&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034360654&partnerID=8YFLogxK

M3 - Article

VL - 12

SP - 289

EP - 300

JO - Sensors and Materials

JF - Sensors and Materials

SN - 0914-4935

IS - 5

ER -