50 cm size seed cast Si ingot growth and its characterization

Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 被引用数 (Scopus)

抄録

We have proposed single seed cast Si growth and developed a furnace for 50 cm squareingots. By optimizing growth parameters, improving gas condition, coating, the quality of mono Siingot has improved. Namely, dislocation density, the concentrations of substitutional carbon andinterstitial oxygen have been significantly reduced. The conversion efficiency of cast Si solar cells hasbecome comparable with those of CZ Si wafers.

本文言語英語
ホスト出版物のタイトルGettering and Defect Engineering in Semiconductor Technology XVI
編集者Peter Pichler, Peter Pichler
出版社Trans Tech Publications Ltd
ページ30-34
ページ数5
ISBN(印刷版)9783038356080
DOI
出版ステータス出版済み - 1 1 2016
外部発表はい
イベント16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 - Bad Staffelstein, ドイツ
継続期間: 9 20 20159 25 2015

出版物シリーズ

名前Solid State Phenomena
242
ISSN(印刷版)1012-0394
ISSN(電子版)1662-9779

その他

その他16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
Countryドイツ
CityBad Staffelstein
Period9/20/159/25/15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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