500°C formation of poly-Si1-xGex (x ≥ 0.5) on SiO2 by ion-beam stimulated solid phase crystallization

Isao Tsunoda, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalConference article

抄録

Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 ≤ x ≤ 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si1-xGex with all Ge fractions (0 - 100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼ 500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.

本文言語英語
ページ(範囲)501-505
ページ数5
ジャーナルMaterials Research Society Symposium - Proceedings
744
DOI
出版ステータス出版済み - 2002
イベントQuantum Confined Semiconductor Nanostructures - Boston MA, 米国
継続期間: 12 2 200212 5 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント 「500°C formation of poly-Si<sub>1-x</sub>Ge<sub>x</sub> (x ≥ 0.5) on SiO<sub>2</sub> by ion-beam stimulated solid phase crystallization」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル