5GHz-band CMOS class-E power amplifier module considering wire bonding

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

抄録

This paper presents a high-efficient 0.18μm CMOS class-E power amplifier (PA) for 5GHz wireless transmitter applications using constant envelope modulation scheme. The proposed class-E PA employs injection-locking technique to reduce required input power. This PA was placed on the lead frame and molded in the packaging for transmitter application. In our design, bonding wires are optimized by using EM simulation. And the coplanar waveguide structure in the RF port was composed of bonding wires. Our PA module is composed of PA in package, PCB, DC cable and SMA connectors. This PA module has a measured PAE = 41.0 %.

元の言語英語
ホスト出版物のタイトル2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ページ157-159
ページ数3
ISBN(電子版)9781467377942
DOI
出版物ステータス出版済み - 1 8 2016
イベントIEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Sendai, 日本
継続期間: 8 26 20158 28 2015

出版物シリーズ

名前2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings

その他

その他IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015
日本
Sendai
期間8/26/158/28/15

Fingerprint

Power amplifiers
Wire
Transmitters
Coplanar waveguides
Polychlorinated biphenyls
Packaging
Cables
Lead
Modulation

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

これを引用

Kanaya, H. (2016). 5GHz-band CMOS class-E power amplifier module considering wire bonding. : 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings (pp. 157-159). [7377919] (2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2015.7377919

5GHz-band CMOS class-E power amplifier module considering wire bonding. / Kanaya, Haruichi.

2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. p. 157-159 7377919 (2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings).

研究成果: 著書/レポートタイプへの貢献会議での発言

Kanaya, H 2016, 5GHz-band CMOS class-E power amplifier module considering wire bonding. : 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings., 7377919, 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 157-159, IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015, Sendai, 日本, 8/26/15. https://doi.org/10.1109/RFIT.2015.7377919
Kanaya H. 5GHz-band CMOS class-E power amplifier module considering wire bonding. : 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. p. 157-159. 7377919. (2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings). https://doi.org/10.1109/RFIT.2015.7377919
Kanaya, Haruichi. / 5GHz-band CMOS class-E power amplifier module considering wire bonding. 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 157-159 (2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings).
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