600 V semi-super junction MOSFET

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Tsuneo Ogura

研究成果: Contribution to conferencePaper

13 引用 (Scopus)

抜粋

New superjunction (SJ) structure is proposed and demonstrated for the power-switching device with remarkable advantage over conventional SJ structure. An n-doped layer is connected to the bottom of the SJ structure for the proposed structure. It is found with experiment and simulation that the proposed structure shows both the lower on-resistance and the softer recovery of body diode than conventional SJ MOSFET. The fabricated Semi-SJ MOSFETs realize Ron as low as 54mΩcm2 (48 mΩcm2 in calculation) at 690 V breakdown voltage with only half depth of the p-column than the conventional SJ MOSFET. The softness factor of body diode is also improved in the factor of 4.5. The proposed MOSFET is very attractive for H-bridge topology applications such as UPSs and small inverter systems thanks to the low on-resistance and the soft recovery body diode.

元の言語英語
ページ45-48
ページ数4
出版物ステータス出版済み - 9 1 2003
外部発表Yes
イベント2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings - Cambridge, 英国
継続期間: 7 14 20037 17 2003

会議

会議2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings
英国
Cambridge
期間7/14/037/17/03

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • これを引用

    Saito, W., Omura, I., Aida, S., Koduki, S., Izumisawa, M., & Ogura, T. (2003). 600 V semi-super junction MOSFET. 45-48. 論文発表場所 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings, Cambridge, 英国.