New superjunction (SJ) structure is proposed and demonstrated for the power-switching device with remarkable advantage over conventional SJ structure. An n-doped layer is connected to the bottom of the SJ structure for the proposed structure. It is found with experiment and simulation that the proposed structure shows both the lower on-resistance and the softer recovery of body diode than conventional SJ MOSFET. The fabricated Semi-SJ MOSFETs realize Ron as low as 54mΩcm2 (48 mΩcm2 in calculation) at 690 V breakdown voltage with only half depth of the p-column than the conventional SJ MOSFET. The softness factor of body diode is also improved in the factor of 4.5. The proposed MOSFET is very attractive for H-bridge topology applications such as UPSs and small inverter systems thanks to the low on-resistance and the soft recovery body diode.
|出版物ステータス||出版済み - 9 1 2003|
|イベント||2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings - Cambridge, 英国|
継続期間: 7 14 2003 → 7 17 2003
|会議||2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings|
|期間||7/14/03 → 7/17/03|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering