600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura

研究成果: Contribution to journalConference article査読

28 被引用数 (Scopus)

抄録

600 V class AlGaN/GaN power HEMT was designed for high voltage power electronics application such as power supplies and motor drives. The fabricated device was demonstrated in a DC-DC down converter circuit, showing the future possibility of high efficiency and high frequency operations of AlGaN/GaN power HEMTs.

本文言語英語
ページ(範囲)587-590
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータス出版済み - 12 1 2003
外部発表はい
イベントIEEE International Electron Devices Meeting - Washington, DC, 米国
継続期間: 12 8 200312 10 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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