抄録
A new type of electron cyclotron resonance (ECR) plasma source has been developed using a circular TE01 mode microwave converted from the principal TE10 rectangular mode. The ion saturation current density of 36 mA/cm2 is achieved for the input microwave power of 3 kW at the nitrogen gas pressure of 5 x 10-4 Torr. The uniformity of the ion saturation current density is within ±3% over 8 inches in diameter, which is better than that produced by a conventional TE11 mode microwave. The mean ion energy at the substrate position in this ECR plasma source is in the range of 20-30 eV, depending on the shape of magnetic fields. The direction of ion motion is confirmed by etching test to be almost perpendicular to the wafer and to be useful for fabricating ULSI circuits on wafers larger than 6 inches in diameter.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 174-178 |
| ページ数 | 5 |
| ジャーナル | Japanese Journal of Applied Physics |
| 巻 | 32 |
| 発行部数 | 1 R |
| DOI | |
| 出版物ステータス | 出版済み - 1 1993 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
これを引用
8“ uniform electron cyclotron resonance plasma source using a circular TE01 mode microwave. / Hidaka, Ryota; Yamaguchi, Toru; Hirotsu, Nobuyoshi; Ohshima, Takaharu; Koga, Ryuji; Tanaka, Masayoshi; Kawai, Yoshinobu.
：: Japanese Journal of Applied Physics, 巻 32, 番号 1 R, 01.1993, p. 174-178.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - 8“ uniform electron cyclotron resonance plasma source using a circular TE01 mode microwave
AU - Hidaka, Ryota
AU - Yamaguchi, Toru
AU - Hirotsu, Nobuyoshi
AU - Ohshima, Takaharu
AU - Koga, Ryuji
AU - Tanaka, Masayoshi
AU - Kawai, Yoshinobu
PY - 1993/1
Y1 - 1993/1
N2 - A new type of electron cyclotron resonance (ECR) plasma source has been developed using a circular TE01 mode microwave converted from the principal TE10 rectangular mode. The ion saturation current density of 36 mA/cm2 is achieved for the input microwave power of 3 kW at the nitrogen gas pressure of 5 x 10-4 Torr. The uniformity of the ion saturation current density is within ±3% over 8 inches in diameter, which is better than that produced by a conventional TE11 mode microwave. The mean ion energy at the substrate position in this ECR plasma source is in the range of 20-30 eV, depending on the shape of magnetic fields. The direction of ion motion is confirmed by etching test to be almost perpendicular to the wafer and to be useful for fabricating ULSI circuits on wafers larger than 6 inches in diameter.
AB - A new type of electron cyclotron resonance (ECR) plasma source has been developed using a circular TE01 mode microwave converted from the principal TE10 rectangular mode. The ion saturation current density of 36 mA/cm2 is achieved for the input microwave power of 3 kW at the nitrogen gas pressure of 5 x 10-4 Torr. The uniformity of the ion saturation current density is within ±3% over 8 inches in diameter, which is better than that produced by a conventional TE11 mode microwave. The mean ion energy at the substrate position in this ECR plasma source is in the range of 20-30 eV, depending on the shape of magnetic fields. The direction of ion motion is confirmed by etching test to be almost perpendicular to the wafer and to be useful for fabricating ULSI circuits on wafers larger than 6 inches in diameter.
UR - http://www.scopus.com/inward/record.url?scp=0027224873&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027224873&partnerID=8YFLogxK
U2 - 10.1143/JJAP.32.174
DO - 10.1143/JJAP.32.174
M3 - Article
AN - SCOPUS:0027224873
VL - 32
SP - 174
EP - 178
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 1 R
ER -