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出版年

  • 2020
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著者

  • Shinichi Nishizawa
2019

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

Watanabe, M., Shigyo, N., Hoshii, T., Furukawa, K., Kakushima, K., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nakajima, A., Nishizawa, S. I., Tsutsui, K., Hiramoto, T., Ohashi, H. および1人, Iwai, H., 5 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 311-314 4 p. 8757640. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; 巻数 2019-May).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 引用 (Scopus)
2020

Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., 2 15 2020, : : Journal of Crystal Growth. 532, 125405.

研究成果: Contribution to journalArticle

1 引用 (Scopus)
2012

Gas-phase modeling of chlorine-based chemical vapor deposition of silicon carbide

Leone, S., Kordina, O., Henry, A., Nishizawa, S. I., Danielsson, Ö. & Janzén, E., 4 4 2012, : : Crystal Growth and Design. 12, 4, p. 1977-1984 8 p.

研究成果: Contribution to journalArticle

10 引用 (Scopus)
2013

Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Liu, P., Kakushima, K., Iwai, H., Nakajima, A., Makino, T., Ogura, M., Nishizawa, S. & Ohashi, H., 2013, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. p. 155-158 4 p. 6695585. (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 引用 (Scopus)
2011

Effect of low frequency magnetic field on SiC solution growth

Mercier, F. & Nishizawa, S. I., 4 28 2011, Silicon Carbide and Related Materials 2010. p. 32-35 4 p. (Materials Science Forum; 巻数 679-680).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2013

Maximum switching frequency characterization of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair power module

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., 12 31 2013, 2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013. p. 1570-1576 7 p. 6646892. (2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 引用 (Scopus)
2017

Experimental verification of a 3D scaling principle for low Vce(sat) IGBT

Kakushima, K., Hoshii, T., Tsutsui, K., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. および2人, Ohashi, H. & Iwai, H., 1 31 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 10.6.1-10.6.4 7838390. (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

9 引用 (Scopus)
2012

4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., 12 17 2012, 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. p. 1509-1514 6 p. 6342635. (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 引用 (Scopus)
2014

Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S. & Kakimoto, K., 1 1 2014, : : Journal of Crystal Growth. 385, p. 95-99 5 p.

研究成果: Contribution to journalArticle

20 引用 (Scopus)
2013
11 引用 (Scopus)
2015

Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET

Nakajima, A., Saito, W., Nishizawa, S. I. & Ohashi, H., 2015, PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 7149120

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 引用 (Scopus)
2014

Erratum: Impact of semiconductor on diamond structure for power supply on chip applications (Japanese Journal of Applied Physics (2014) 53 (04EP16))

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., 6 2014, : : Japanese journal of applied physics. 53, 6, 069202.

研究成果: Contribution to journalComment/debate

2013

Experimental evaluation of 10kHz switching operation of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair module

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., 12 31 2013, 2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013. p. 1577-1583 7 p. 6646893. (2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

4 引用 (Scopus)
2015

The silicon on diamond structure by low-temperature bonding technique

Duangchan, S., Uchikawa, Y., Koishikawa, Y., Akiyoshi, B., Nakagawa, K., Matsumoto, S., Hasegawa, M. & Nishizawa, S., 7 15 2015, 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Institute of Electrical and Electronics Engineers Inc., p. 187-192 6 p. 7159590. (Proceedings - Electronic Components and Technology Conference; 巻数 2015-July).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

7 引用 (Scopus)
2014

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Nakajima, A., Nishizawa, S., Ohashi, H., Yonezawa, H., Tsutsui, K., Kakushima, K., Wakabayashi, H. & Iwai, H., 1 1 2014, Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014. Institute of Electrical and Electronics Engineers Inc., p. 241-244 4 p. 6856021. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

11 引用 (Scopus)
2011

Design and analysis of a bus bar structure for a medium voltage inverter

Ando, M., Wada, K., Takao, K., Kanai, T., Nishizawa, S. & Ohashi, H., 10 11 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011. 6020404. (Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

15 引用 (Scopus)
2020

CSTBT™ technology for high voltage applications with high dynamic robustness and low overall loss

Nakamura, K., Chen, Z., Nishizawa, S. I. & Furukawa, A., 7 2020, : : Microelectronics Reliability. 110, 113635.

研究成果: Contribution to journalArticle

Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off

Saito, W. & Nishizawa, S. I., 7 2020, : : IEEE Electron Device Letters. 41, 7, p. 1060-1062 3 p., 9085363.

研究成果: Contribution to journalArticle

Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance

Saito, W. & Nishizawa, S. I., 8 2020, : : IEEE Transactions on Electron Devices. 67, 8, p. 3285-3290 6 p., 9127192.

研究成果: Contribution to journalArticle

2012

Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S., Kangawa, Y. & Kakimoto, K., 8 1 2012, : : Journal of Crystal Growth. 352, 1, p. 177-180 4 p.

研究成果: Contribution to journalArticle

16 引用 (Scopus)
2020

On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness

Ogawa, T., Saito, W. & Nishizawa, S. I., 7 2020, : : IEEE Electron Device Letters. 41, 7, p. 1063-1065 3 p., 9109292.

研究成果: Contribution to journalArticle

2012

Role of surface effects on silicon carbide polytype stability

Mercier, F. & Nishizawa, S. I., 12 1 2012, : : Journal of Crystal Growth. 360, 1, p. 189-192 4 p.

研究成果: Contribution to journalArticle

24 引用 (Scopus)
2020

Editorial

Derby, J. J., Kakimoto, K. & Nishizawa, S. I., 5 15 2020, : : Journal of Crystal Growth. 538, 125594.

研究成果: Contribution to journalEditorial

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Shigyo, N., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A., Saito, W., Nishizawa, S. I., Tsukuda, M., Omura, I. および2人, Ohashi, H. & Hiramoto, T., 5 2020, : : IEEE Transactions on Semiconductor Manufacturing. 33, 2, p. 159-165 7 p., 8986674.

研究成果: Contribution to journalArticle

2019

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S. および3人, Omura, I., Ohashi, H. & Hiramoto, T., 1 16 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 8614491. (Technical Digest - International Electron Devices Meeting, IEDM; 巻数 2018-December).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

4 引用 (Scopus)

Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs

Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsukuda, M., Ogura, A., Tsutsui, K., Iwai, H., Nishizawa, S., Omura, I., Ohashi, H. および1人, Hiramoto, T., 3 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. Institute of Electrical and Electronics Engineers Inc., p. 98-101 4 p. 8730922. (IEEE International Conference on Microelectronic Test Structures; 巻数 2019-March).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 引用 (Scopus)

Freewheeling Diode Technology with Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications

Nakamura, K., Masuoka, F., Nishii, A., Nishizawa, S. I. & Furukawa, A., 11 2019, : : IEEE Transactions on Electron Devices. 66, 11, p. 4842-4849 8 p., 8852709.

研究成果: Contribution to journalArticle

1 引用 (Scopus)
1 引用 (Scopus)
2020

Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization

Sato, R., Kakimoto, K., Saito, W. & Nishizawa, S. I., 9 2020, Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020. Institute of Electrical and Electronics Engineers Inc., p. 494-497 4 p. 9170035. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; 巻数 2020-September).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2019

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., 2 1 2019, : : Journal of Crystal Growth. 507, p. 154-156 3 p.

研究成果: Contribution to journalArticle

2015

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Nakajima, A., Nishizawa, S. I., Kubota, S., Kayanuma, R., Tsutsui, K., Ohashi, H., Kakushima, K., Wakabayashi, H. & Iwai, H., 10 30 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 7314489. (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

4 引用 (Scopus)
2020

Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Kakushima, K., Hoshii, T., Tsutsui, K., Iwai, H., Nishizawa, S. I., Omura, I. & Hiramoto, T., 4 1 2020, : : Japanese journal of applied physics. 59, SG, SGGD18.

研究成果: Contribution to journalArticle

2011

Diamond power devices - Possbility of high voltage applicatios

Yamasaki, S., Matsumoto, T., Oyama, K., Kato, H., Ogura, M., Takeuchi, D., Makino, T., Nishizawa, S., Oohash, H. & Okushi, H., 2011, 2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings. p. 418-420 3 p. 6123021. (2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2019

Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation

Luo, P., Ekkanath Madathil, S. N., Nishizawa, S. I. & Saito, W., 12 2019, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993596. (Technical Digest - International Electron Devices Meeting, IEDM; 巻数 2019-December).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

4 引用 (Scopus)

Trend in thermal resistance of advanced power modules

Shishido, N., Tsukuda, M. & Nishizawa, S. I., 1 1 2019, PCIM Europe-International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019. Amrhein, M. & Schulze Niehoff, A. (版). Mesago PCIM GmbH, p. 104-108 5 p. (PCIM Europe Conference Proceedings).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2012

Design and implementation of a non-destructive test circuit for SiC-MOSFETs

Wada, K., Nishizawa, S. & Ohashi, H., 2012, Conference Proceedings - 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012. 巻 1. p. 10-15 6 p. 6258831

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

5 引用 (Scopus)
2016

Wafer requirement for future power devices

Nishizawa, S. I., 1 5 2016, TENCON 2015 - 2015 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 7372890. (IEEE Region 10 Annual International Conference, Proceedings/TENCON; 巻数 2016-January).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2014

2.5kV, 200kW bi-directional isolated DC/DC converter for medium-voltage applications

Matsuoka, Y., Wada, K., Nakahara, M., Takao, K., Sung, K., Ohashi, H. & Nishizawa, S., 1 1 2014, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, p. 744-749 6 p. 6869671

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

7 引用 (Scopus)
2020

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., 2 15 2020, : : Journal of Crystal Growth. 532, 125404.

研究成果: Contribution to journalArticle

1 引用 (Scopus)
2016

Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., 5 2016, : : IEEE Transactions on Industrial Electronics. 63, 5, p. 2679-2687 9 p., 7362196.

研究成果: Contribution to journalArticle

15 引用 (Scopus)
2014

Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Nakajima, A., Liu, P., Ogura, M., Makino, T., Kakushima, K., Nishizawa, S., Ohashi, H., Yamasaki, S. & Iwai, H., 4 21 2014, : : Journal of Applied Physics. 115, 15, 153707.

研究成果: Contribution to journalArticle

19 引用 (Scopus)
2015

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Nakajima, A., Nishizawa, S. I., Ohashi, H., Kayanuma, R., Tsutsui, K., Kubota, S., Kakushima, K., Wakabayashi, H. & Iwai, H., 6 12 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., p. 357-360 4 p. 7123463. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; 巻数 2015-June).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

9 引用 (Scopus)
2012

Analysis of growth velocity of SiC growth by the physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S. I., 5 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 25-28 4 p. (Materials Science Forum; 巻数 717-720).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2014

Experimental investigation of normally-on type bidirectional switch for indirect Matrix Converters

Sung, K., Iijima, R., Nishizawa, S., Norigoe, I. & Ohashi, H., 1 1 2014, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, p. 117-122 6 p. 6869568. (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

7 引用 (Scopus)
2015

High-speed dicing of SiC wafers by femtosecond pulsed laser

Nakajima, A., Tateishi, Y., Murakami, H., Takahashi, H., Ota, M., Kosugi, R., Mitani, T., Nishizawa, S. I. & Ohashi, H., 1 1 2015, Silicon Carbide and Related Materials 2014. Chaussende, D. & Ferro, G. (版). Trans Tech Publications Ltd, p. 524-527 4 p. (Materials Science Forum; 巻数 821-823).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2011
14 引用 (Scopus)
2013

Raman intensity profiles of zone-folded modes in SiC: Identification of stacking sequence of 10H-SiC

Nakashima, S., Tomita, T., Kuwahara, N., Mitani, T., Tomobe, M., Nishizawa, S. & Okumura, H., 11 21 2013, : : Journal of Applied Physics. 114, 19, 193510.

研究成果: Contribution to journalArticle

2020

Surface Buffer IGBT for High Total Performance

Saito, W. & Nishizawa, S. I., 8 2020, : : IEEE Transactions on Electron Devices. 67, 8, p. 3263-3269 7 p., 9115639.

研究成果: Contribution to journalArticle

High Switching Controllability Trench Gate Design in Si-IGBTs

Saito, W. & Nishizawa, S. I., 9 2020, Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020. Institute of Electrical and Electronics Engineers Inc., p. 447-450 4 p. 9170118. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; 巻数 2020-September).

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices

Luo, P., Madathil, S. N. E., Nishizawa, S. I. & Saito, W., 9 2020, : : IEEE Transactions on Electron Devices. 67, 9, p. 3691-3697 7 p., 9145633.

研究成果: Contribution to journalArticle