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著者

  • Koichi Kakimoto

10 cm diameter mono cast Si growth and its characterization

Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Li, J. Y., Sekiguchi, T., Kojima, T., Ohshita, Y., Ogura, A., Fukuzawa, M., Nakano, S., Gao, B. & Kakimoto, K., 1 1 2014, Gettering and Defect Engineering in Semiconductor Technology XV. Trans Tech Publications Ltd, p. 89-93 5 p. (Solid State Phenomena; 巻数 205-206).

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., 5 1 2018, : : Crystal Research and Technology. 53, 5, 1700246.

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

3d numerical analysis of the asymmetric three-phase line of floating zone for silicon crystal growth

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., 2 2020, : : Crystals. 10, 2, 121.

研究成果: ジャーナルへの寄稿記事

公開
16 引用 (Scopus)

3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., 2 1 2018, : : Journal of Crystal Growth. 483, p. 269-274 6 p.

研究成果: ジャーナルへの寄稿記事

3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., 2 15 2020, : : Journal of Crystal Growth. 532, 125403.

研究成果: ジャーナルへの寄稿記事

50 cm size seed cast Si ingot growth and its characterization

Sekiguchi, T., Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Nakano, S., Gao, B. & Kakimoto, K., 1 1 2016, Gettering and Defect Engineering in Semiconductor Technology XVI. Pichler, P. & Pichler, P. (版). Trans Tech Publications Ltd, p. 30-34 5 p. (Solid State Phenomena; 巻数 242).

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1-xNx

Valencia, H., Kangawa, Y. & Kakimoto, K., 12 15 2015, : : Journal of Crystal Growth. 432, p. 6-14 9 p., 22983.

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)
10 引用 (Scopus)

Advantage in solar cell efficiency of high-quality seed cast mono Si ingot

Miyamura, Y., Harada, H., Jiptner, K., Nakano, S., Gao, B., Kakimoto, K., Nakamura, K., Ohshita, Y., Ogura, A., Sugawara, S. & Sekiguchi, T., 6 1 2015, : : Applied Physics Express. 8, 6, 062301.

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

Alexander-haasen model of basal plane dislocations in single-crystal sapphire

Gao, B., Nakano, S., Miyazaki, N. & Kakimoto, K., 8 6 2014, : : Crystal Growth and Design. 14, 8, p. 4080-4086 7 p.

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

Analysis of growth velocity of SiC growth by the physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S., 5 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 25-28 4 p. (Materials Science Forum; 巻数 717-720).

研究成果: 著書/レポートタイプへの貢献会議での発言

Anisotropic thermal stress simulation with complex crystal-melt interface evolution for seeded growth of monocrystalline silicon

Gao, B., Nakano, S., Harada, H., Miyamura, Y., Sekiguchi, T. & Kakimoto, K., 11 7 2012, : : Crystal Growth and Design. 12, 11, p. 5708-5714 7 p.

研究成果: ジャーナルへの寄稿記事

11 引用 (Scopus)

Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon

Gao, B., Jiptner, K., Nakano, S., Harada, H., Miyamura, Y., Sekiguchi, T. & Kakimoto, K., 2 1 2015, : : Journal of Crystal Growth. 411, p. 49-55 7 p.

研究成果: ジャーナルへの寄稿記事

6 引用 (Scopus)

Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells

Li, J., Prakash, R. R., Jiptner, K., Chen, J., Miyamura, Y., Harada, H., Kakimoto, K., Ogura, A. & Sekiguchi, T., 6 4 2013, : : Journal of Crystal Growth. 377, p. 37-42 6 p.

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

Calculation of phase diagrams of the Li3N-Al system for AlN growth

Yayama, T., Kangawa, Y. & Kakimoto, K., 5 1 2011, : : Physica Status Solidi (C) Current Topics in Solid State Physics. 8, 5, p. 1581-1584 4 p.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

Chairpersons’ preface

Kakimoto, K. & Arakawa, Y., 6 15 2017, : : Journal of Crystal Growth. 468, p. 1-3 3 p.

研究成果: ジャーナルへの寄稿編集

Characterization of residual strain in Si ingots grown by the seed-cast method

Jiptner, K., Fukuzawa, M., Miyamura, Y., Harada, H., Kakimoto, K. & Sekiguchi, T., 1 1 2014, Gettering and Defect Engineering in Semiconductor Technology XV. Trans Tech Publications Ltd, p. 94-99 6 p. (Solid State Phenomena; 巻数 205-206).

研究成果: 著書/レポートタイプへの貢献会議での発言

5 引用 (Scopus)

Computer modeling of crystal growth of silicon for solar cells

Liu, L., Liu, X., Li, Z. & Kakimoto, K., 9 1 2011, : : Frontiers of Energy and Power Engineering in China. 5, 3, p. 305-312 8 p.

研究成果: ジャーナルへの寄稿記事

Control of extended defects in cast and seed cast Si ingots for photovoltaic application

Sekiguchi, T., Jiptner, K., Prakash, R. R., Chen, J., Miyamura, Y., Harada, H., Nakano, S., Gao, B. & Kakimoto, K., 8 1 2015, : : Physica Status Solidi (C) Current Topics in Solid State Physics. 12, 8, p. 1094-1098 5 p.

研究成果: ジャーナルへの寄稿記事

Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal

Nagaoka, A., Miyake, H., Taniyama, T., Kakimoto, K. & Yoshino, K., 9 9 2013, : : Applied Physics Letters. 103, 11, 112107.

研究成果: ジャーナルへの寄稿記事

55 引用 (Scopus)

Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization

Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Nakano, S., Gao, B., Kakimoto, K. & Sekiguchi, T., 9 1 2014, : : Journal of Crystal Growth. 401, p. 133-136 4 p.

研究成果: ジャーナルへの寄稿記事

18 引用 (Scopus)

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

Ishikawa, Y., Tajima, M., Kiuchi, H., Ogura, A., Miyamura, Y., Harada, H. & Kakimoto, K., 8 1 2018, : : Japanese Journal of Applied Physics. 57, 8, 08RB06.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

Development of carbon transport and modeling in Czochralski silicon crystal growth

Liu, X., Nakano, S. & Kakimoto, K., 1 1 2017, : : Crystal Research and Technology. 52, 1, 1600221.

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

Development of crystal growth technique of silicon by the Czochralski method

Kakimoto, K., 8 1 2013, : : Acta Physica Polonica A. 124, 2, p. 227-230 4 p.

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1 ) metalorganic vapor phase epitaxy

Kempisty, P., Kangawa, Y., Kusaba, A., Shiraishi, K., Krukowski, S., Bockowski, M., Kakimoto, K. & Amano, H., 10 2 2017, : : Applied Physics Letters. 111, 14, 141602.

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

Dislocation analysis of a new method for growing large-size crystals of monocrystalline silicon using a seed casting technique

Gao, B., Nakano, S., Harada, H., Miyamura, Y., Sekiguchi, T. & Kakimoto, K., 12 5 2012, : : Crystal Growth and Design. 12, 12, p. 6144-6150 7 p.

研究成果: ジャーナルへの寄稿記事

15 引用 (Scopus)

Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation

Jiptner, K., Miyamura, Y., Harada, H., Gao, B., Kakimoto, K. & Sekiguchi, T., 12 1 2016, : : Progress in Photovoltaics: Research and Applications. 24, 12, p. 1513-1522 10 p.

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)
14 引用 (Scopus)

Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., 5 1 2018, : : Journal of Crystal Growth. 489, p. 1-4 4 p.

研究成果: ジャーナルへの寄稿記事

Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

Liu, X., Han, X. F., Nakano, S. & Kakimoto, K., 2 1 2018, : : Journal of Crystal Growth. 483, p. 241-244 4 p.

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions

Gao, B., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., 6 5 2013, : : Crystal Growth and Design. 13, 6, p. 2661-2669 9 p.

研究成果: ジャーナルへの寄稿記事

20 引用 (Scopus)

Effect of crucible cover material on impurities of multicrystalline silicon in a unidirectional solidification furnace

Gao, B., Nakano, S. & Kakimoto, K., 3 1 2011, : : Journal of Crystal Growth. 318, 1, p. 255-258 4 p.

研究成果: ジャーナルへの寄稿記事

29 引用 (Scopus)

Effect of oxygen on dislocation multiplication in silicon crystals

Fukushima, W., Harada, H., Miyamura, Y., Imai, M., Nakano, S. & Kakimoto, K., 3 15 2018, : : Journal of Crystal Growth. 486, p. 45-49 5 p.

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth

Liu, X., Nakano, S. & Kakimoto, K., 6 15 2017, : : Journal of Crystal Growth. 468, p. 595-600 6 p.

研究成果: ジャーナルへの寄稿記事

6 引用 (Scopus)

Effects of argon flow on heat transfer in a directional solidification process for silicon solar cells

Li, Z., Liu, L., Ma, W. & Kakimoto, K., 3 1 2011, : : Journal of Crystal Growth. 318, 1, p. 298-303 6 p.

研究成果: ジャーナルへの寄稿記事

40 引用 (Scopus)

Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells

Li, Z., Liu, L., Ma, W. & Kakimoto, K., 3 1 2011, : : Journal of Crystal Growth. 318, 1, p. 304-312 9 p.

研究成果: ジャーナルへの寄稿記事

34 引用 (Scopus)

Effects of sodium on electrical properties in Cu2ZnSnS 4 single crystal

Nagaoka, A., Miyake, H., Taniyama, T., Kakimoto, K., Nose, Y., Scarpulla, M. A. & Yoshino, K., 1 1 2014, : : Applied Physics Letters. 104, 15, 152101.

研究成果: ジャーナルへの寄稿記事

87 引用 (Scopus)

Electrical properties of Cu2ZnSnS4 single crystal

Nagaoka, A., Yoshino, K., Miyake, H., Taniyama, T. & Kakimoto, K., 1 1 2013, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., p. 2621-2624 4 p. 6745011. (Conference Record of the IEEE Photovoltaic Specialists Conference).

研究成果: 著書/レポートタイプへの貢献会議での発言

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Tachibana, T., Sameshima, T., Kojima, T., Arafune, K., Kakimoto, K., Miyamura, Y., Harada, H., Sekiguchi, T., Ohshita, Y. & Ogura, A., 4 1 2012, : : Journal of Applied Physics. 111, 7, 074505.

研究成果: ジャーナルへの寄稿記事

19 引用 (Scopus)

Evaluation of residual strain in directional solidified mono-Si ingots

Jiptner, K., Fukuzawa, M., Miyamura, Y., Harada, H., Kakimoto, K. & Sekiguchi, T., 1 1 2013, : : Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 1, p. 141-145 5 p.

研究成果: ジャーナルへの寄稿記事

13 引用 (Scopus)

Evaluation of silicon substrates fabricated by seeding cast technique

Tachibana, T., Sameshima, T., Kojima, T., Arafune, K., Kakimoto, K., Miyamura, Y., Harada, H., Sekiguchi, T., Ohshita, Y. & Ogura, A., 1 1 2012, Defects-Recognition, Imaging and Physics in Semiconductors XIV. Trans Tech Publications Ltd, p. 133-136 4 p. (Materials Science Forum; 巻数 725).

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN

Shiraishi, K., Sekiguchi, K., Shirakawa, H., Chokawa, K., Araidai, M., Kangawa, Y. & Kakimoto, K., 1 1 2017, ECS Transactions. Misra, D., De Gendt, S., Housa, M., Kita, K. & Landheer, D. (版). 1 版 Electrochemical Society Inc., p. 295-301 7 p. (ECS Transactions; 巻数 80, 番号 1).

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

Sekiguchi, K., Shirakawa, H., Yamamoto, Y., Araidai, M., Kangawa, Y., Kakimoto, K. & Shiraishi, K., 6 15 2017, : : Journal of Crystal Growth. 468, p. 950-953 4 p.

研究成果: ジャーナルへの寄稿記事

4 引用 (Scopus)

First principles approach to C aggregation process during 0th graphene growth on SiC(0001)

Inoue, M., Kageshima, H., Kangawa, Y. & Kakimoto, K., 1 1 2013, Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. American Institute of Physics Inc., p. 129-130 2 p. (AIP Conference Proceedings; 巻数 1566).

研究成果: 著書/レポートタイプへの貢献会議での発言

First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001)

Inoue, M., Kageshima, H., Kangawa, Y. & Kakimoto, K., 8 8 2012, : : Physical Review B - Condensed Matter and Materials Physics. 86, 8, 085417.

研究成果: ジャーナルへの寄稿記事

18 引用 (Scopus)

First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth

Kawamura, T., Kitamoto, A., Imade, M., Yoshimura, M., Mori, Y., Morikawa, Y., Kangawa, Y., Kakimoto, K. & Akiyama, T., 11 1 2018, : : Japanese Journal of Applied Physics. 57, 11, 115504.

研究成果: ジャーナルへの寄稿記事

First-principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions

Kawamura, T., Kitamoto, A., Imade, M., Yoshimura, M., Mori, Y., Morikawa, Y., Kangawa, Y. & Kakimoto, K., 8 2017, : : Physica Status Solidi (B) Basic Research. 254, 8, 1600706.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)