A 10Gb/s burst-mode CDR IC in 0.13μm CMOS

Masafumi Nogawa; Kazuyoshi Nishimura; Shunji Kimura; Tomoaki Yoshida; Tomoaki Kawamura; Minoru Togashi; Kiyomi Kumozaki; Yusuke Ohtomo

A 10Gb/s burst-mode CDR IC in 0.13μm CMOS

Masafumi Nogawa, Kazuyoshi Nishimura, Shunji Kimura, Tomoaki Yoshida, Tomoaki Kawamura, Minoru Togashi, Kiyomi Kumozaki, Yusuke Ohtomo

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

62 被引用数 (Scopus)

本文言語	英語
ページ（範囲）	228-229+595
ジャーナル	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
巻	48
出版ステータス	出版済み - 12月 6 2005
外部発表	はい
イベント	2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, 米国継続期間: 2月 6 2005 → 2月 10 2005

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
電子工学および電気工学

他のファイルとリンク

引用スタイル

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title = "A 10Gb/s burst-mode CDR IC in 0.13μm CMOS",

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T1 - A 10Gb/s burst-mode CDR IC in 0.13μm CMOS

AU - Nogawa, Masafumi

AU - Nishimura, Kazuyoshi

AU - Kimura, Shunji

AU - Yoshida, Tomoaki

AU - Kawamura, Tomoaki

AU - Togashi, Minoru

AU - Kumozaki, Kiyomi

AU - Ohtomo, Yusuke

PY - 2005/12/6

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SP - 228-229+595

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SN - 0193-6530

T2 - 2005 IEEE International Solid-State Circuits Conference, ISSCC

Y2 - 6 February 2005 through 10 February 2005

ER -