A 120-W boost converter operation using a high-voltage GaN-HEMT

Wataru Saito; Tomohiro Nitta; Yorito Kakiuchi; Yasunobu Saito; Kunio Tsuda; Ichiro Omura; Masakazu Yamaguchi

doi:10.1109/LED.2007.910796

A 120-W boost converter operation using a high-voltage GaN-HEMT

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura, Masakazu Yamaguchi

研究成果: Contribution to journal › Article › 査読

101 被引用数 (Scopus)

抄録

A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a power efficiency of 94.2% under a drain peak voltage as high as 350 V and a switching frequency of 1 MHz. The dual field-plate structure realized high-voltage switching operation with high power efficiency as dynamic on-resistance was suppressed by an increase of the current collapse phenomena.

本文言語	英語
ページ（範囲）	8-10
ページ数	3
ジャーナル	IEEE Electron Device Letters
巻	29
号	1
DOI	https://doi.org/10.1109/LED.2007.910796
出版ステータス	出版済み - 1 1 2008
外部発表	はい

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

文献へのアクセス

10.1109/LED.2007.910796

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引用スタイル

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AU - Omura, Ichiro

AU - Yamaguchi, Masakazu

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