A 15.5mΩcm2-680V superjunction MOSFET reduced on-resistance by lateral pitch narrowing

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka, Hideki Okumura, Masakazu Yamaguchi, Tsuneo Ogura

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

37 被引用数 (Scopus)

抄録

Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mΩcm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 μm for the onresistance reduction. The demonstrated onresistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 ΩnC and high avalanche current of 175 A/cm2.

本文言語英語
ホスト出版物のタイトルProceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
出版ステータス出版済み - 12 1 2006
外部発表はい
イベント18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06 - Naples, イタリア
継続期間: 6 4 20066 8 2006

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2006
ISSN(印刷版)1063-6854

会議

会議18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
Countryイタリア
CityNaples
Period6/4/066/8/06

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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