A-193 (dBc/Hz) FoM and -126 (dBc/Hz) phase noise octagonal ring oscillator using pulse injection technique

K. Yousef, Hongting Jia, A. Allam, Ramesh Pokharel, A. Abdel-Rahman, Haruichi Kanaya

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抄録

This manuscript presents the design of a low phase noise, high figure of merit (FoM) single-ended octagonal ring oscillator (RO). The proposed RO employs the pulse injection (PI) technique for performance enhancement. The PI technique is used for suppression of phase noise and spurious harmonics. Besides, a novel voltage dependent phase shifter is employed. The proposed RO has an output signal with voltage controlled phase. Different output signal phases can be obtained employing different selected voltages to control the output signal phase. The proposed injection locked ring oscillator (ILRO) represents a suitable implementation for phase shift keying. The proposed ILRO has a measured oscillation frequency of 4.9 GHz with a fine tuning range of 500 MHz. It has a measured phase noise of -126.17 dBc/Hz @ 1MHz offset while consuming only 4.8 mW of DC power. The proposed ILRO has a FoM of -193.17 dBc/Hz. This RO has been designed and implemented in 0.18 μm CMOS technology.

元の言語英語
ページ(範囲)1760-1762
ページ数3
ジャーナルMicrowave and Optical Technology Letters
58
発行部数7
DOI
出版物ステータス出版済み - 7 1 2016

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Pulse generators
Phase noise
figure of merit
oscillators
injection
rings
Electric potential
pulses
Phase shifters
Phase shift keying
Tuning
output
electric potential
phase shift keying
CMOS
direct current
tuning
retarding
harmonics
oscillations

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

A-193 (dBc/Hz) FoM and -126 (dBc/Hz) phase noise octagonal ring oscillator using pulse injection technique. / Yousef, K.; Jia, Hongting; Allam, A.; Pokharel, Ramesh; Abdel-Rahman, A.; Kanaya, Haruichi.

:: Microwave and Optical Technology Letters, 巻 58, 番号 7, 01.07.2016, p. 1760-1762.

研究成果: ジャーナルへの寄稿記事

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AU - Yousef, K.

AU - Jia, Hongting

AU - Allam, A.

AU - Pokharel, Ramesh

AU - Abdel-Rahman, A.

AU - Kanaya, Haruichi

PY - 2016/7/1

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N2 - This manuscript presents the design of a low phase noise, high figure of merit (FoM) single-ended octagonal ring oscillator (RO). The proposed RO employs the pulse injection (PI) technique for performance enhancement. The PI technique is used for suppression of phase noise and spurious harmonics. Besides, a novel voltage dependent phase shifter is employed. The proposed RO has an output signal with voltage controlled phase. Different output signal phases can be obtained employing different selected voltages to control the output signal phase. The proposed injection locked ring oscillator (ILRO) represents a suitable implementation for phase shift keying. The proposed ILRO has a measured oscillation frequency of 4.9 GHz with a fine tuning range of 500 MHz. It has a measured phase noise of -126.17 dBc/Hz @ 1MHz offset while consuming only 4.8 mW of DC power. The proposed ILRO has a FoM of -193.17 dBc/Hz. This RO has been designed and implemented in 0.18 μm CMOS technology.

AB - This manuscript presents the design of a low phase noise, high figure of merit (FoM) single-ended octagonal ring oscillator (RO). The proposed RO employs the pulse injection (PI) technique for performance enhancement. The PI technique is used for suppression of phase noise and spurious harmonics. Besides, a novel voltage dependent phase shifter is employed. The proposed RO has an output signal with voltage controlled phase. Different output signal phases can be obtained employing different selected voltages to control the output signal phase. The proposed injection locked ring oscillator (ILRO) represents a suitable implementation for phase shift keying. The proposed ILRO has a measured oscillation frequency of 4.9 GHz with a fine tuning range of 500 MHz. It has a measured phase noise of -126.17 dBc/Hz @ 1MHz offset while consuming only 4.8 mW of DC power. The proposed ILRO has a FoM of -193.17 dBc/Hz. This RO has been designed and implemented in 0.18 μm CMOS technology.

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