Superjunction (SJ) MOSFETs with extremely low on-resistance and high avalanche withstanding capability have been designed and experimentally demonstrated. The p- and n-columns for the SJ structure are designed to reduce the on-resistance and to maximize both the breakdown voltage and the avalanche withstanding capability. The demonstrated SJ-MOSFET realized the lowest on-resistance of 20∼mΩcm2 among previously reported 600 V-class SJ-MOSFETs. The device also withstands high avalanche current of 185∼A/cm2.
|出版ステータス||出版済み - 10 18 2004|
|イベント||Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, 日本|
継続期間: 5 24 2004 → 5 27 2004
|会議||Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)|
|Period||5/24/04 → 5/27/04|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering