A 20mΩcm2 600 V-class super junction MOSFET

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka, Tsuneo Ogura

研究成果: Contribution to conferencePaper査読

46 被引用数 (Scopus)

抄録

Superjunction (SJ) MOSFETs with extremely low on-resistance and high avalanche withstanding capability have been designed and experimentally demonstrated. The p- and n-columns for the SJ structure are designed to reduce the on-resistance and to maximize both the breakdown voltage and the avalanche withstanding capability. The demonstrated SJ-MOSFET realized the lowest on-resistance of 20∼mΩcm2 among previously reported 600 V-class SJ-MOSFETs. The device also withstands high avalanche current of 185∼A/cm2.

本文言語英語
ページ459-462
ページ数4
出版ステータス出版済み - 10 18 2004
外部発表はい
イベントProceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, 日本
継続期間: 5 24 20045 27 2004

会議

会議Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)
Country日本
CityKitakyushu
Period5/24/045/27/04

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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