A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors

S. A Z Murad, Ramesh Pokharel, Haruichi Kanaya, K. Yoshida

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

14 被引用数 (Scopus)

抄録

This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with bondwires for the higher quality factor to increase PA performance and to reduce chip size. The single-ended topology is employed because most existing components designed to be driven by PAs are single-ended. The cascode topology with a self-biasing technique is used to prevent device stress and to decrease the requirement for additional bond pads. The measurement results indicate that the PA delivers 19.2 dBm output power and 27.8% power added efficiency with 3.3-V power supply into a 50 Ω load. The chip area is 0.37 mm2.

本文言語英語
ホスト出版物のタイトル2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
ページ25-28
ページ数4
DOI
出版ステータス出版済み - 2010
イベント2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, 米国
継続期間: 1 11 20101 13 2010

その他

その他2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010
Country米国
CityNew Orleans, LA
Period1/11/101/13/10

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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