A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors

S. A Z Murad; Ramesh Pokharel; Haruichi Kanaya; K. Yoshida

doi:10.1109/SMIC.2010.5422842

A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors

S. A Z Murad, Ramesh Pokharel, Haruichi Kanaya, K. Yoshida

研究成果: Chapter in Book/Report/Conference proceeding › Conference contribution

14 被引用数 (Scopus)

抄録

This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with bondwires for the higher quality factor to increase PA performance and to reduce chip size. The single-ended topology is employed because most existing components designed to be driven by PAs are single-ended. The cascode topology with a self-biasing technique is used to prevent device stress and to decrease the requirement for additional bond pads. The measurement results indicate that the PA delivers 19.2 dBm output power and 27.8% power added efficiency with 3.3-V power supply into a 50 Ω load. The chip area is 0.37 mm².

本文言語	英語
ホスト出版物のタイトル	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
ページ	25-28
ページ数	4
DOI	https://doi.org/10.1109/SMIC.2010.5422842
出版ステータス	出版済み - 2010
イベント	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, 米国継続期間: 1 11 2010 → 1 13 2010

その他

その他	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010
Country	米国
City	New Orleans, LA
Period	1/11/10 → 1/13/10

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

文献へのアクセス

10.1109/SMIC.2010.5422842

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引用スタイル

A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors. / Murad, S. A Z; Pokharel, Ramesh ; Kanaya, Haruichi; Yoshida, K.

2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers. 2010. p. 25-28 5422842.

研究成果: Chapter in Book/Report/Conference proceeding › Conference contribution

Murad, SAZ, Pokharel, R , Kanaya, H & Yoshida, K 2010, A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors. in 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers., 5422842, pp. 25-28, 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010, New Orleans, LA, 米国, 1/11/10. https://doi.org/10.1109/SMIC.2010.5422842

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abstract = "This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with bondwires for the higher quality factor to increase PA performance and to reduce chip size. The single-ended topology is employed because most existing components designed to be driven by PAs are single-ended. The cascode topology with a self-biasing technique is used to prevent device stress and to decrease the requirement for additional bond pads. The measurement results indicate that the PA delivers 19.2 dBm output power and 27.8% power added efficiency with 3.3-V power supply into a 50 Ω load. The chip area is 0.37 mm2.",

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