抄録
This paper describes the design of 5-GHz fully integrated CMOS class-E single-ended power amplifier (PA) for wireless transmitter applications in a 0.18-μm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3 mm2. The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4 % power-added efficiency with 2.3 V power supply voltage into a 50 Ω load.
本文言語 | 英語 |
---|---|
ホスト出版物のタイトル | Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 |
ページ | 237-239 |
ページ数 | 3 |
DOI | |
出版ステータス | 出版済み - 2012 |
イベント | 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 - Singapore, シンガポール 継続期間: 11月 21 2012 → 11月 23 2012 |
その他
その他 | 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 |
---|---|
国/地域 | シンガポール |
City | Singapore |
Period | 11/21/12 → 11/23/12 |
!!!All Science Journal Classification (ASJC) codes
- コンピュータ ネットワークおよび通信