A behavioral model of unipolar resistive rams and its application to HSPICE integration

Nobuo Akou, Tetsuya Asai, Takeshi Yanagida, Tomoji Kawai, Yoshihito Amemiya

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

We propose a behavioral model of unipolar resistive RAMs (ReRAMs). The model integrates three behavioral characteristics of unipolar ReRAMs; i.e., i) ON/OFF resistive switching characteristics for transient voltage pulses, ii) I-V characteristics exhibiting ON/OFF resistive switching with current compliance, and iii) current compliance dependence of both ON resistance and OFF threshold currents. The model is described by three nonlinear differential equations with several static functions, which enables us to employ the model in any numerical or circuit simulator. As an example, we integrate the model on HSPICE, and show the simulated results using experimental parameters extracted from fabricated ReRAMs of TiO2 thin films.

本文言語英語
ページ(範囲)1467-1473
ページ数7
ジャーナルIEICE Electronics Express
7
19
DOI
出版ステータス出版済み - 10 10 2010
外部発表はい

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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