A behavioral model of unipolar resistive rams and its application to HSPICE integration

Nobuo Akou; Tetsuya Asai; Takeshi Yanagida; Tomoji Kawai; Yoshihito Amemiya

doi:10.1587/elex.7.1467

A behavioral model of unipolar resistive rams and its application to HSPICE integration

Nobuo Akou, Tetsuya Asai, Takeshi Yanagida, Tomoji Kawai, Yoshihito Amemiya

研究成果: Contribution to journal › Article › 査読

4 被引用数 (Scopus)

抄録

We propose a behavioral model of unipolar resistive RAMs (ReRAMs). The model integrates three behavioral characteristics of unipolar ReRAMs; i.e., i) ON/OFF resistive switching characteristics for transient voltage pulses, ii) I-V characteristics exhibiting ON/OFF resistive switching with current compliance, and iii) current compliance dependence of both ON resistance and OFF threshold currents. The model is described by three nonlinear differential equations with several static functions, which enables us to employ the model in any numerical or circuit simulator. As an example, we integrate the model on HSPICE, and show the simulated results using experimental parameters extracted from fabricated ReRAMs of TiO2 thin films.

本文言語	英語
ページ（範囲）	1467-1473
ページ数	7
ジャーナル	IEICE Electronics Express
巻	7
号	19
DOI	https://doi.org/10.1587/elex.7.1467
出版ステータス	出版済み - 10 10 2010
外部発表	はい

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

文献へのアクセス

10.1587/elex.7.1467

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引用スタイル

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