A bidirectional loop-to-loop transfer gate for ion-implanted bubble devices with on chip cache organization

H. Urai, K. Matsuyama, K. Yoshimi

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

A new bidirectional loop-to-loop transfer gate has been designed with an N-shape conductor stripe. It is characterized for use with ion-implanted bubble devices with on chip cache organization (OCCO). The gate is operated in 4 modes for He+ ion implanted devices with 1 µm diameter bubbles. Only one of the 4 transfer modes is found to be usable for bidirectional transfer operation, according to bubble data recurrence considerations between cache and storage loops, and according to operation margin stability. Composite operation margins are obtained as 25 Oe for greater than 55 Oe in-plane drive field, even for consecutive data transfer. The bidirectional transfer gate makes possible ion-implanted bubble devices for high access performance, even in high bit density large capacity memories.

本文言語英語
ページ(範囲)1847-1849
ページ数3
ジャーナルIEEE Transactions on Magnetics
19
5
DOI
出版ステータス出版済み - 9 1983
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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