A DC-2.5 GHz high linearity CMOS attenuator in a 0.18μm technology

Ibrahim L. Abdalla, Hongting Jia, Ramesh K. Pokharel

研究成果: ジャーナルへの寄稿Conference article

抄録

A CMOS attenuator with high linearity has been designed and measured in a 0.18-μm CMOS process, to be used for a variable gain amplifier of RF wireless transceiver. The design is based on four cascaded Bridge-T attenuator stages that are consecutively activated to adjust the attenuation level and improve linearity. The design operates in the frequency band of DC-2.5 GHz with 2 - 3.5 dB insertion loss and 14 dB maximum attenuation in the entire frequency range. Measured and simulated results are in good agreement over the frequency band of interest. Measured worst case S11 and S22 are -10 and -8.8 dB, respectively, across the frequency band. The measured 1-dB compression point is +22 dBm at maximum-attenuation.

元の言語英語
ページ(範囲)591-597
ページ数7
ジャーナルProcedia Manufacturing
22
DOI
出版物ステータス出版済み - 1 1 2018
イベント11th International Conference on Interdisciplinarity in Engineering, INTER-ENG 2017 - Tirgu Mures, ルーマニア
継続期間: 10 5 201710 6 2017

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Frequency bands
Insertion losses
Transceivers
Variable gain amplifiers

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Artificial Intelligence

これを引用

A DC-2.5 GHz high linearity CMOS attenuator in a 0.18μm technology. / Abdalla, Ibrahim L.; Jia, Hongting; Pokharel, Ramesh K.

:: Procedia Manufacturing, 巻 22, 01.01.2018, p. 591-597.

研究成果: ジャーナルへの寄稿Conference article

Abdalla, Ibrahim L. ; Jia, Hongting ; Pokharel, Ramesh K. / A DC-2.5 GHz high linearity CMOS attenuator in a 0.18μm technology. :: Procedia Manufacturing. 2018 ; 巻 22. pp. 591-597.
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