We have proposed a practical depth profiling model for a commercial Total Reflection X-Ray Fluorescence (TXRF) spectrometry instrument. The model includes three factors peculiar to a commercial TXRF instrument: (a) the irradiated X-ray photon density on the sample surface depends on a glancing angle, (b) the X-ray irradiated area becomes smaller than the detector view over a certain glancing angle, and (c) the incident X-ray has angular divergence. This model was optimized by comparing the measured Si-Ka for a silicon wafer with the calculated one. The results indicated that all of the three factors are indispensable for our instrument. We have applied this model to a surface contaminant and discussed its adequacy.
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