A far-infrared sensor with a subwavelength structured absorber

Yoshimi Ohta, Yoshikazu Arakawa, Takafumi Fukumoto, Yasuhiro Fukuyama, Masaki Hirota

研究成果: Contribution to journalArticle査読

抄録

A thermoelectric far-infrared sensor with a subwavelength structured (SWS) absorber is presented. The sensor has a low cost potential because it is fabricated with the conventional CMOS manufacturing process and micromachining technology. To increase the responsivity of the sensor, we have developed the SWS absorber that has high infrared absorptivity of more than 80 %. The sensor achieved high responsivity of 3,900 VAV. The sensor has external dimensions of 100 μm × 100 μn. The fabricated SWS absorber has 4 μn pitch and 1.9 μm height. The SWS absorber effectively reduces surface reflection loss over a wide spectral region and enhances the absorptivity. We observed that the sensor with the SWS absorber had 20 % higher responsivity than that with the flat surfaced absorber. Copy; 2010 The Institute of Electrical Engineers of Japan.

本文言語英語
ページ(範囲)327-332+10
ジャーナルIEEJ Transactions on Sensors and Micromachines
130
7
DOI
出版ステータス出版済み - 2010
外部発表はい

All Science Journal Classification (ASJC) codes

  • 機械工学
  • 電子工学および電気工学

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