A field-induced semiconductor quantum dot defined by a single metallic front-gate

A. Richter, K. Matsuda, Y. Harada, H. Tamura, T. Akazaki, Y. Hirayama, H. Takayanagi

研究成果: ジャーナルへの寄稿Conference article

抜粋

We present studies on the electronic transport in a quantum dot based on a back-gated undoped GaAs/AlGaAs heterostructure. A high-quality two-dimensional electron gas can be induced in the structure by applying a back-gate voltage. The quantum dot is well defined by means of a single metallic frontgate. We observe clear regions of Coulomb blockade and pronounced tunneling peaks in a broad range of source-drain and front-gate voltages. The formation of the quantum dot and energetic evolution of the associated tunneling peaks are studied as a function of the applied front-gate voltage. Excellent agreement to the calculated Coulomb diamond pattern using the 'constant interaction model' is achieved, if a front-gate voltage dependent change of the dot capacitance is taken into account.

元の言語英語
ページ(範囲)1317-1320
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
発行部数4
DOI
出版物ステータス出版済み - 12 1 2003
外部発表Yes
イベント2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, 日本
継続期間: 9 30 200210 3 2002

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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