A formation mechanism of carbon nanotube films on SiC(0001)

M. Kusunoki, T. Suzuki, T. Hirayama, N. Shibata, Kenji Kaneko

研究成果: ジャーナルへの寄稿記事

183 引用 (Scopus)

抄録

We report a remarkable difference of decomposed structures on the Si(0001) and C(0001̄ faces of a SiC single crystal observed by using a cross-sectional high-resolution electron microscopy. An aligned carbon nanotube (CNT) film was fabricated on the C face perpendicular to the surface after heating at 1700 °C for half an hour in a vacuum. On the contrary, a very thin layer of graphite sheets parallel to the surface was formed on the Si face under the same condition. It is proposed that the growth of CNTs is determined by the generation of nanocaps at the initial stage, by comparing the difference of the decomposition mechanisms on the both faces.

元の言語英語
ページ(範囲)531-533
ページ数3
ジャーナルApplied Physics Letters
77
発行部数4
DOI
出版物ステータス出版済み - 7 24 2000
外部発表Yes

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carbon nanotubes
electron microscopy
graphite
decomposition
vacuum
heating
high resolution
single crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

A formation mechanism of carbon nanotube films on SiC(0001). / Kusunoki, M.; Suzuki, T.; Hirayama, T.; Shibata, N.; Kaneko, Kenji.

:: Applied Physics Letters, 巻 77, 番号 4, 24.07.2000, p. 531-533.

研究成果: ジャーナルへの寄稿記事

Kusunoki, M, Suzuki, T, Hirayama, T, Shibata, N & Kaneko, K 2000, 'A formation mechanism of carbon nanotube films on SiC(0001)', Applied Physics Letters, 巻. 77, 番号 4, pp. 531-533. https://doi.org/10.1063/1.127034
Kusunoki, M. ; Suzuki, T. ; Hirayama, T. ; Shibata, N. ; Kaneko, Kenji. / A formation mechanism of carbon nanotube films on SiC(0001). :: Applied Physics Letters. 2000 ; 巻 77, 番号 4. pp. 531-533.
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