A formation mechanism of carbon nanotube films on SiC(0001)

M. Kusunoki, T. Suzuki, T. Hirayama, N. Shibata, Kenji Kaneko

研究成果: ジャーナルへの寄稿学術誌査読

194 被引用数 (Scopus)

抄録

We report a remarkable difference of decomposed structures on the Si(0001) and C(0001̄ faces of a SiC single crystal observed by using a cross-sectional high-resolution electron microscopy. An aligned carbon nanotube (CNT) film was fabricated on the C face perpendicular to the surface after heating at 1700 °C for half an hour in a vacuum. On the contrary, a very thin layer of graphite sheets parallel to the surface was formed on the Si face under the same condition. It is proposed that the growth of CNTs is determined by the generation of nanocaps at the initial stage, by comparing the difference of the decomposition mechanisms on the both faces.

本文言語英語
ページ(範囲)531-533
ページ数3
ジャーナルApplied Physics Letters
77
4
DOI
出版ステータス出版済み - 7月 24 2000
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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