TY - JOUR
T1 - A general method of fabricating free-standing, monolayer graphene electronic device and its property characterization
AU - Wang, Haidong
AU - Kurata, Kosaku
AU - Fukunaga, Takanobu
AU - Ago, Hiroki
AU - Takamatsu, Hiroshi
AU - Zhang, Xing
AU - Ikuta, Tatsuya
AU - Takahashi, Koji
AU - Nishiyama, Takashi
AU - Takata, Yasuyuki
N1 - Funding Information:
The work is supported by the JSPS KAKENHI Grant-in-Aid for Young Scientists B (No. 15K17987 ), Research of Development of Young Researchers in Kyushu University (2015) and National Natural Science Foundation of China Grant Nos. 51327001 , 51136001 and 51356001 .
Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.
PY - 2016/8/15
Y1 - 2016/8/15
N2 - We demonstrate a general process for fabricating graphene nanoelectronic devices that have next several features: free-standing, micrometer-sized monolayer graphene with high quality, arbitrarily-shaped metallic electrodes or sensors. In contrast to the normal routes, a gas etching process is used to create a deep trench in silicon for suspending the whole graphene device in a much larger area. User-designed electrodes or sensors are fabricated on the suspended graphene at the same time for realizing multiple functions. In this work, a suspended gold nanofilm sensor is designed to measure the intrinsic electrical and thermal properties of graphene on site. The sensor serves as both electrode and precise resistance thermometer at the same time. By simply changing the metallic electrode shape and electrical circuit, the free-standing graphene can be made into different devices, such as single-molecule detector or nano-resonator. In order to test the robustness of graphene device, a high electrical current is applied to heat the graphene in vacuum until it breaks. The breakdown current density is measured to be 1.86 mA/μm. More importantly, this method is not only limited to graphene, but also can be applied to any other two-dimensional materials.
AB - We demonstrate a general process for fabricating graphene nanoelectronic devices that have next several features: free-standing, micrometer-sized monolayer graphene with high quality, arbitrarily-shaped metallic electrodes or sensors. In contrast to the normal routes, a gas etching process is used to create a deep trench in silicon for suspending the whole graphene device in a much larger area. User-designed electrodes or sensors are fabricated on the suspended graphene at the same time for realizing multiple functions. In this work, a suspended gold nanofilm sensor is designed to measure the intrinsic electrical and thermal properties of graphene on site. The sensor serves as both electrode and precise resistance thermometer at the same time. By simply changing the metallic electrode shape and electrical circuit, the free-standing graphene can be made into different devices, such as single-molecule detector or nano-resonator. In order to test the robustness of graphene device, a high electrical current is applied to heat the graphene in vacuum until it breaks. The breakdown current density is measured to be 1.86 mA/μm. More importantly, this method is not only limited to graphene, but also can be applied to any other two-dimensional materials.
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U2 - 10.1016/j.sna.2016.05.002
DO - 10.1016/j.sna.2016.05.002
M3 - Article
AN - SCOPUS:84974653259
VL - 247
SP - 24
EP - 29
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
SN - 0924-4247
ER -