A highly attenuative CMOS LNA at 5-6 GHz using negative GM circuit for UWB applications

Nischal Koirala, A. Anand, Ramesh Pokharel, Haruichi Kanaya, K. Yoshida

研究成果: ジャーナルへの寄稿記事

抄録

This paper presents a UWB low noise amplifier (LNA) for 3.1-10.6 GHz applications, with an excellent attenuation at 5-6 GHz for rejecting the wireless local area network (WLAN) interference. A method of canceling the on-chip inductive resistance has been employed in this work to make the inductor an extremely low loss inductor with a very high quality factor. The fully integrated UWB LNA is designed in the CMOS 0.18 μm Taiwan Semiconductor Manufacturing Company (TSMC) technology. Measurement results show that the LNA achieves attenuation of up to 39 dB at 5.4 GHz, while the 1 dB power gain is 10 dB. The measured return losses (S11 and S22) are better than -7.4 dB while the noise figure is 5-6.1 dB in the range of operation. The measured input P1dB and IIP3 measured at 6.5 GHz are -12.2 and 2 dBm, respectively. The designed LNA occupies an area of 1.105 × 0.68 mm2.

元の言語英語
ページ(範囲)894-899
ページ数6
ジャーナルMicrowave and Optical Technology Letters
55
発行部数4
DOI
出版物ステータス出版済み - 4 1 2013

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Low noise amplifiers
Ultra-wideband (UWB)
low noise
CMOS
amplifiers
Networks (circuits)
inductors
attenuation
power gain
local area networks
Noise figure
Taiwan
Wireless local area networks (WLAN)
Q factors
manufacturing
chips
Semiconductor materials
interference
Industry

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

A highly attenuative CMOS LNA at 5-6 GHz using negative GM circuit for UWB applications. / Koirala, Nischal; Anand, A.; Pokharel, Ramesh; Kanaya, Haruichi; Yoshida, K.

:: Microwave and Optical Technology Letters, 巻 55, 番号 4, 01.04.2013, p. 894-899.

研究成果: ジャーナルへの寄稿記事

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