A low phase noise FBAR based multiband VCO design

Guoqiang Zhang, Abhay Kochhar, Keiji Yoshida, Shuji Tanaka, Kenya Hashimoto, Masayoshi Esashi, Haruichi Kanaya, Ramesh Pokharel

研究成果: ジャーナルへの寄稿レター

1 引用 (Scopus)

抄録

In this letter, design methodlogy of a low phase noise multiband film bulk acoustic resonator (FBAR) based voltage controlled oscillator (FBAR-VCO) is presented. It employs a 1.9GHz cross-coupled FBAR-VCO core, and extends oscillation to 0.65GHz, 0.98GHz, 1.96GHz and 3.92GHz by a divider and a multiplier. By analyzing the low frequency instability and proposing the solution based on a capacitor, cross-coupled architecture is employed in 1.9GHz FBAR-VCO core and phase noise degradation is extensively studied for extended frequencies. By considering the effect of transistors' size on the Q-factor and impedance of FBAR, excellent phase noise and high loop gain are obtained. The post-layout simulation shows the proposed multiband FBAR-VCO achieves the lowest phase noise below 150dBc/Hz at 1MHz offset frequency.

元の言語英語
ジャーナルIEICE Electronics Express
10
発行部数13
DOI
出版物ステータス出版済み - 7 17 2013

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Acoustic resonators
voltage controlled oscillators
Variable frequency oscillators
Phase noise
resonators
acoustics
Acoustic impedance
dividers
multipliers
layouts
Q factors
capacitors
Transistors
Capacitors
transistors
impedance
degradation
low frequencies
Degradation
oscillations

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

Zhang, G., Kochhar, A., Yoshida, K., Tanaka, S., Hashimoto, K., Esashi, M., ... Pokharel, R. (2013). A low phase noise FBAR based multiband VCO design. IEICE Electronics Express, 10(13). https://doi.org/10.1587/elex.10.20130425

A low phase noise FBAR based multiband VCO design. / Zhang, Guoqiang; Kochhar, Abhay; Yoshida, Keiji; Tanaka, Shuji; Hashimoto, Kenya; Esashi, Masayoshi; Kanaya, Haruichi; Pokharel, Ramesh.

:: IEICE Electronics Express, 巻 10, 番号 13, 17.07.2013.

研究成果: ジャーナルへの寄稿レター

Zhang, G, Kochhar, A, Yoshida, K, Tanaka, S, Hashimoto, K, Esashi, M, Kanaya, H & Pokharel, R 2013, 'A low phase noise FBAR based multiband VCO design', IEICE Electronics Express, 巻. 10, 番号 13. https://doi.org/10.1587/elex.10.20130425
Zhang G, Kochhar A, Yoshida K, Tanaka S, Hashimoto K, Esashi M その他. A low phase noise FBAR based multiband VCO design. IEICE Electronics Express. 2013 7 17;10(13). https://doi.org/10.1587/elex.10.20130425
Zhang, Guoqiang ; Kochhar, Abhay ; Yoshida, Keiji ; Tanaka, Shuji ; Hashimoto, Kenya ; Esashi, Masayoshi ; Kanaya, Haruichi ; Pokharel, Ramesh. / A low phase noise FBAR based multiband VCO design. :: IEICE Electronics Express. 2013 ; 巻 10, 番号 13.
@article{a45251774d9a479b9dd6a32a2e458d90,
title = "A low phase noise FBAR based multiband VCO design",
abstract = "In this letter, design methodlogy of a low phase noise multiband film bulk acoustic resonator (FBAR) based voltage controlled oscillator (FBAR-VCO) is presented. It employs a 1.9GHz cross-coupled FBAR-VCO core, and extends oscillation to 0.65GHz, 0.98GHz, 1.96GHz and 3.92GHz by a divider and a multiplier. By analyzing the low frequency instability and proposing the solution based on a capacitor, cross-coupled architecture is employed in 1.9GHz FBAR-VCO core and phase noise degradation is extensively studied for extended frequencies. By considering the effect of transistors' size on the Q-factor and impedance of FBAR, excellent phase noise and high loop gain are obtained. The post-layout simulation shows the proposed multiband FBAR-VCO achieves the lowest phase noise below 150dBc/Hz at 1MHz offset frequency.",
author = "Guoqiang Zhang and Abhay Kochhar and Keiji Yoshida and Shuji Tanaka and Kenya Hashimoto and Masayoshi Esashi and Haruichi Kanaya and Ramesh Pokharel",
year = "2013",
month = "7",
day = "17",
doi = "10.1587/elex.10.20130425",
language = "English",
volume = "10",
journal = "IEICE Electronics Express",
issn = "1349-2543",
publisher = "The Institute of Electronics, Information and Communication Engineers (IEICE)",
number = "13",

}

TY - JOUR

T1 - A low phase noise FBAR based multiband VCO design

AU - Zhang, Guoqiang

AU - Kochhar, Abhay

AU - Yoshida, Keiji

AU - Tanaka, Shuji

AU - Hashimoto, Kenya

AU - Esashi, Masayoshi

AU - Kanaya, Haruichi

AU - Pokharel, Ramesh

PY - 2013/7/17

Y1 - 2013/7/17

N2 - In this letter, design methodlogy of a low phase noise multiband film bulk acoustic resonator (FBAR) based voltage controlled oscillator (FBAR-VCO) is presented. It employs a 1.9GHz cross-coupled FBAR-VCO core, and extends oscillation to 0.65GHz, 0.98GHz, 1.96GHz and 3.92GHz by a divider and a multiplier. By analyzing the low frequency instability and proposing the solution based on a capacitor, cross-coupled architecture is employed in 1.9GHz FBAR-VCO core and phase noise degradation is extensively studied for extended frequencies. By considering the effect of transistors' size on the Q-factor and impedance of FBAR, excellent phase noise and high loop gain are obtained. The post-layout simulation shows the proposed multiband FBAR-VCO achieves the lowest phase noise below 150dBc/Hz at 1MHz offset frequency.

AB - In this letter, design methodlogy of a low phase noise multiband film bulk acoustic resonator (FBAR) based voltage controlled oscillator (FBAR-VCO) is presented. It employs a 1.9GHz cross-coupled FBAR-VCO core, and extends oscillation to 0.65GHz, 0.98GHz, 1.96GHz and 3.92GHz by a divider and a multiplier. By analyzing the low frequency instability and proposing the solution based on a capacitor, cross-coupled architecture is employed in 1.9GHz FBAR-VCO core and phase noise degradation is extensively studied for extended frequencies. By considering the effect of transistors' size on the Q-factor and impedance of FBAR, excellent phase noise and high loop gain are obtained. The post-layout simulation shows the proposed multiband FBAR-VCO achieves the lowest phase noise below 150dBc/Hz at 1MHz offset frequency.

UR - http://www.scopus.com/inward/record.url?scp=84880074331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880074331&partnerID=8YFLogxK

U2 - 10.1587/elex.10.20130425

DO - 10.1587/elex.10.20130425

M3 - Letter

AN - SCOPUS:84880074331

VL - 10

JO - IEICE Electronics Express

JF - IEICE Electronics Express

SN - 1349-2543

IS - 13

ER -