A low power UWB low noise amplifier using current reused and feedback techniques

A. I.A. Galal, Ramesh Pokharel, Haruichi Kanaya, K. Yoshida

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

This letter presents a full band low power low noise amplifier design in 0.18-μm complementary metal-oxide-semiconductor FET (CMOS) technology.The proposed circuit adopts current reused technique to achieve low power consumption, and shunt resistive feedback for wide-band operation. An excellent wide and flat gain, low noise figure, are achieved by composes of these techniques. The implemented ultra-wideband (UWB) low noise amplifier (LNA) exhibits a flat gain of 18 dB with total power consumption of 5.2 mA from 1.8 V power supply. The noise figure is 3.1 dB within the entire bandwidth. The input and output return loss is less than -10 dB in the specified bandwidth. The proposed technique exhibits 0.8 dBm of IIP3. The active die area of UWB LNA occupies 0.72 mm 2.

元の言語英語
ページ(範囲)471-474
ページ数4
ジャーナルMicrowave and Optical Technology Letters
54
発行部数2
DOI
出版物ステータス出版済み - 2 1 2012

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current amplifiers
Broadband amplifiers
Low noise amplifiers
Ultra-wideband (UWB)
low noise
Noise figure
broadband
Feedback
Electric power utilization
Bandwidth
amplifiers
Field effect transistors
bandwidth
Power amplifiers
amplifier design
shunts
Metals
power supplies
CMOS
field effect transistors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

A low power UWB low noise amplifier using current reused and feedback techniques. / Galal, A. I.A.; Pokharel, Ramesh; Kanaya, Haruichi; Yoshida, K.

:: Microwave and Optical Technology Letters, 巻 54, 番号 2, 01.02.2012, p. 471-474.

研究成果: ジャーナルへの寄稿記事

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