A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions

M. Hane, Y. Kawakami, H. Nakamura, T. Yamada, K. Kumagai, Y. Watanabe

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

抄録

A new SRAM soft-error simulation tool has been developed and its accuracy was evaluated through both acceleration tests for α-particles and energetic neutron beam irradiations. This simulation was able to reproduce the measurement data for the soft-error rate of a 0.15-μm SRAM (test-chip) within a factor of two, including the power supply voltage dependency. The simulation system consists of several sub-parts, and features a new data-set for neutron/silicon-atom nuclear reactions and the use of a three-dimensional device simulator for calculating precise charge collection amounts. This accurate simulation can be used for quantitative evaluation of competing effects by means of reduced critical charges and cell-area reduction, and have applications in developing future SRAM technology.

元の言語英語
ホスト出版物のタイトルSISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
出版者Institute of Electrical and Electronics Engineers Inc.
ページ239-242
ページ数4
ISBN(電子版)0780378261
DOI
出版物ステータス出版済み - 1 1 2003
イベント2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, 米国
継続期間: 9 3 20039 5 2003

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2003-January

その他

その他2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
米国
Boston
期間9/3/039/5/03

Fingerprint

Soft Error
Device Simulation
Nuclear reactions
Static random access storage
Neutron
Neutrons
Charge
Quantitative Evaluation
Simulation Tool
Simulation System
Irradiation
Error Rate
Neutron beams
Silicon
Simulation
Simulator
Chip
Voltage
Three-dimensional
Cell

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

これを引用

Hane, M., Kawakami, Y., Nakamura, H., Yamada, T., Kumagai, K., & Watanabe, Y. (2003). A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions. : SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 239-242). [1233681] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; 巻数 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233681

A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions. / Hane, M.; Kawakami, Y.; Nakamura, H.; Yamada, T.; Kumagai, K.; Watanabe, Y.

SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. p. 239-242 1233681 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; 巻 2003-January).

研究成果: 著書/レポートタイプへの貢献会議での発言

Hane, M, Kawakami, Y, Nakamura, H, Yamada, T, Kumagai, K & Watanabe, Y 2003, A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions. : SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices., 1233681, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 巻. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 239-242, 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003, Boston, 米国, 9/3/03. https://doi.org/10.1109/SISPAD.2003.1233681
Hane M, Kawakami Y, Nakamura H, Yamada T, Kumagai K, Watanabe Y. A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions. : SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc. 2003. p. 239-242. 1233681. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2003.1233681
Hane, M. ; Kawakami, Y. ; Nakamura, H. ; Yamada, T. ; Kumagai, K. ; Watanabe, Y. / A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions. SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 239-242 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).
@inproceedings{2763ab957ca84bb8bd08c2dcc5e9b2a1,
title = "A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions",
abstract = "A new SRAM soft-error simulation tool has been developed and its accuracy was evaluated through both acceleration tests for α-particles and energetic neutron beam irradiations. This simulation was able to reproduce the measurement data for the soft-error rate of a 0.15-μm SRAM (test-chip) within a factor of two, including the power supply voltage dependency. The simulation system consists of several sub-parts, and features a new data-set for neutron/silicon-atom nuclear reactions and the use of a three-dimensional device simulator for calculating precise charge collection amounts. This accurate simulation can be used for quantitative evaluation of competing effects by means of reduced critical charges and cell-area reduction, and have applications in developing future SRAM technology.",
author = "M. Hane and Y. Kawakami and H. Nakamura and T. Yamada and K. Kumagai and Y. Watanabe",
year = "2003",
month = "1",
day = "1",
doi = "10.1109/SISPAD.2003.1233681",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "239--242",
booktitle = "SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices",
address = "United States",

}

TY - GEN

T1 - A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions

AU - Hane, M.

AU - Kawakami, Y.

AU - Nakamura, H.

AU - Yamada, T.

AU - Kumagai, K.

AU - Watanabe, Y.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - A new SRAM soft-error simulation tool has been developed and its accuracy was evaluated through both acceleration tests for α-particles and energetic neutron beam irradiations. This simulation was able to reproduce the measurement data for the soft-error rate of a 0.15-μm SRAM (test-chip) within a factor of two, including the power supply voltage dependency. The simulation system consists of several sub-parts, and features a new data-set for neutron/silicon-atom nuclear reactions and the use of a three-dimensional device simulator for calculating precise charge collection amounts. This accurate simulation can be used for quantitative evaluation of competing effects by means of reduced critical charges and cell-area reduction, and have applications in developing future SRAM technology.

AB - A new SRAM soft-error simulation tool has been developed and its accuracy was evaluated through both acceleration tests for α-particles and energetic neutron beam irradiations. This simulation was able to reproduce the measurement data for the soft-error rate of a 0.15-μm SRAM (test-chip) within a factor of two, including the power supply voltage dependency. The simulation system consists of several sub-parts, and features a new data-set for neutron/silicon-atom nuclear reactions and the use of a three-dimensional device simulator for calculating precise charge collection amounts. This accurate simulation can be used for quantitative evaluation of competing effects by means of reduced critical charges and cell-area reduction, and have applications in developing future SRAM technology.

UR - http://www.scopus.com/inward/record.url?scp=77957013742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957013742&partnerID=8YFLogxK

U2 - 10.1109/SISPAD.2003.1233681

DO - 10.1109/SISPAD.2003.1233681

M3 - Conference contribution

AN - SCOPUS:77957013742

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 239

EP - 242

BT - SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

ER -