A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions

M. Hane, Y. Kawakami, H. Nakamura, T. Yamada, K. Kumagai, Y. Watanabe

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

2 被引用数 (Scopus)

抄録

A new SRAM soft-error simulation tool has been developed and its accuracy was evaluated through both acceleration tests for α-particles and energetic neutron beam irradiations. This simulation was able to reproduce the measurement data for the soft-error rate of a 0.15-μm SRAM (test-chip) within a factor of two, including the power supply voltage dependency. The simulation system consists of several sub-parts, and features a new data-set for neutron/silicon-atom nuclear reactions and the use of a three-dimensional device simulator for calculating precise charge collection amounts. This accurate simulation can be used for quantitative evaluation of competing effects by means of reduced critical charges and cell-area reduction, and have applications in developing future SRAM technology.

本文言語英語
ホスト出版物のタイトルSISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
出版社Institute of Electrical and Electronics Engineers Inc.
ページ239-242
ページ数4
ISBN(電子版)0780378261
DOI
出版ステータス出版済み - 1月 1 2003
イベント2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, 米国
継続期間: 9月 3 20039月 5 2003

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2003-January

その他

その他2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
国/地域米国
CityBoston
Period9/3/039/5/03

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • コンピュータ サイエンスの応用
  • モデリングとシミュレーション

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