TY - JOUR
T1 - A new self-aligned process for fabrication of microemitter arrays using selective etching of silicon
AU - Asano, Tanemasa
AU - Yasuda, Junji
PY - 1996/12
Y1 - 1996/12
N2 - Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10V is demonstrated.
AB - Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10V is demonstrated.
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U2 - 10.1143/jjap.35.6632
DO - 10.1143/jjap.35.6632
M3 - Article
AN - SCOPUS:0010152917
VL - 35
SP - 6632
EP - 6636
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12 SUPPL. B
ER -