A new self-aligned process for fabrication of microemitter arrays using selective etching of silicon

Tanemasa Asano, Junji Yasuda

研究成果: ジャーナルへの寄稿記事

12 引用 (Scopus)

抄録

Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10V is demonstrated.

元の言語英語
ページ(範囲)6632-6636
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
発行部数12 SUPPL. B
出版物ステータス出版済み - 12 1 1996

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Etching
emitters
etching
Fabrication
Silicon
fabrication
Electrons
silicon
Single crystals
Anisotropic etching
Thermal diffusion
Ion implantation
Crystal orientation
Boron
Masks
Doping (additives)
spacing
Oxidation
electrons
single crystals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

A new self-aligned process for fabrication of microemitter arrays using selective etching of silicon. / Asano, Tanemasa; Yasuda, Junji.

:: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 35, 番号 12 SUPPL. B, 01.12.1996, p. 6632-6636.

研究成果: ジャーナルへの寄稿記事

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AB - Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10V is demonstrated.

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