抄録
Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10V is demonstrated.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 6632-6636 |
| ページ数 | 5 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 巻 | 35 |
| 発行部数 | 12 SUPPL. B |
| 出版物ステータス | 出版済み - 12 1 1996 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
これを引用
A new self-aligned process for fabrication of microemitter arrays using selective etching of silicon. / Asano, Tanemasa; Yasuda, Junji.
：: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 35, 番号 12 SUPPL. B, 01.12.1996, p. 6632-6636.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - A new self-aligned process for fabrication of microemitter arrays using selective etching of silicon
AU - Asano, Tanemasa
AU - Yasuda, Junji
PY - 1996/12/1
Y1 - 1996/12/1
N2 - Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10V is demonstrated.
AB - Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10V is demonstrated.
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UR - http://www.scopus.com/inward/citedby.url?scp=0010152917&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0010152917
VL - 35
SP - 6632
EP - 6636
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12 SUPPL. B
ER -