A new type of tunnel-effect transistor, which has nearly the same structure as conventional metal-oxide-silicon field- effect transistors (MOSFET’s) except for a Schottky barrier source contact and a low resistivity channel layer, has been proposed. The structure has the advantage of an easy fabrication process and is capable of submicron channel length without the short channel effect. In the proposed device the drain current is controlled by the gate bias through the tunnel injection of electrons at the Schottky barrier source contact. A 2-D device simulation has shown that this device can have a high transconductance of 138 mS/mm at a drain voltage of 2 V.
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