A new type of tunnel-effect transistor employing internal field emission of schottky barrier junction

Reiji Hattori, Akihiro Nakae, Junji Shirafuji

研究成果: ジャーナルへの寄稿学術誌査読

30 被引用数 (Scopus)

抄録

A new type of tunnel-effect transistor, which has nearly the same structure as conventional metal-oxide-silicon field- effect transistors (MOSFET’s) except for a Schottky barrier source contact and a low resistivity channel layer, has been proposed. The structure has the advantage of an easy fabrication process and is capable of submicron channel length without the short channel effect. In the proposed device the drain current is controlled by the gate bias through the tunnel injection of electrons at the Schottky barrier source contact. A 2-D device simulation has shown that this device can have a high transconductance of 138 mS/mm at a drain voltage of 2 V.

本文言語英語
ページ(範囲)L1467-L1469
ジャーナルJapanese Journal of Applied Physics
31
10
DOI
出版ステータス出版済み - 10月 1992
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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