A novel low on-resistance Schottky-barrier diode with p-buried floating layer structure

Wataru Saito, Ichiro Omura, Ken'ichi Tokano, Tsuneo Ogura, Hiromichi Ohashi

研究成果: Contribution to journalArticle

22 引用 (Scopus)

抜粋

A novel low on-resistance Schottky-barrier diode (SBD) structure with a p-buried floating layer is demonstrated by fabricating 300-V SBDs using a buried epitaxial growth technique. The fabricated SBDs realize a 50% reduction of chip area and show a possibility of higher breakdown voltage SBD of over 100 V. In addition, both the low on-resistance and the soft-recovery characteristics can be realized by the p-buried floating layer structure. The demonstrated structure is very attractive for reduction of power dissipation without electromagnetic interference noise increase.

元の言語英語
ページ(範囲)797-802
ページ数6
ジャーナルIEEE Transactions on Electron Devices
51
発行部数5
DOI
出版物ステータス出版済み - 5 1 2004
外部発表Yes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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