A novel low on-resistance Schottky-barrier diode with p-buried floating layer structure

Wataru Saito, Ichiro Omura, Ken'ichi Tokano, Tsuneo Ogura, Hiromichi Ohashi

研究成果: Contribution to journalArticle査読

22 被引用数 (Scopus)

抄録

A novel low on-resistance Schottky-barrier diode (SBD) structure with a p-buried floating layer is demonstrated by fabricating 300-V SBDs using a buried epitaxial growth technique. The fabricated SBDs realize a 50% reduction of chip area and show a possibility of higher breakdown voltage SBD of over 100 V. In addition, both the low on-resistance and the soft-recovery characteristics can be realized by the p-buried floating layer structure. The demonstrated structure is very attractive for reduction of power dissipation without electromagnetic interference noise increase.

本文言語英語
ページ(範囲)797-802
ページ数6
ジャーナルIEEE Transactions on Electron Devices
51
5
DOI
出版ステータス出版済み - 5 1 2004
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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